US Patent Application 18448152. NON-VOLATILE MEMORY CIRCUIT AND METHOD simplified abstract

NON-VOLATILE MEMORY CIRCUIT AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Gu-Huan Li of Hsinchu (TW)]]

[[Category:Chen-Ming Hung of Hsinchu (TW)]]

[[Category:Yu-Der Chih of Hsinchu (TW)]]

NON-VOLATILE MEMORY CIRCUIT AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18448152 titled 'NON-VOLATILE MEMORY CIRCUIT AND METHOD

Simplified Explanation

The patent application describes a memory circuit that includes non-volatile memory devices, a high-voltage driver, and power switches.

• The memory circuit has a bank of non-volatile memory devices.
• It includes a high-voltage driver and a global high-voltage power switch.
• The high-voltage power switch generates a high-voltage power signal.
• There is also a high-voltage power switch connected between the global switch and the high-voltage driver.
• The high-voltage power switch outputs power and ground signals in response to the high-voltage power signal.
• Both the power and ground signals have two voltage levels.
• The high-voltage driver activates a column of the non-volatile memory devices based on the power and ground signals.

Original Abstract Submitted

A memory circuit includes a bank of non-volatile memory (NVM) devices, a high-voltage (HV) driver, a global HV power switch configured to generate a HV power signal, and a HV power switch coupled between the global HV switch and the HV driver. The HV power switch is configured to, responsive to the HV power signal, output power and ground signals, each of the power signal and the ground signal having first and second voltage levels, and the HV driver is configured to output a HV activation signal to a column of the bank of NVM devices responsive to the power signal and the ground signal.