Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via

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Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447871 titled 'Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via

Simplified Explanation

The patent application describes a semiconductor device with a through-substrate via that extends from the frontside to the backside of a semiconductor substrate. The via has a concave or convex portion near the backside of the substrate.

Through-substrate via extends from frontside to backside of semiconductor substrate
Via has concave or convex portion near backside of substrate
Isolation film is formed on the backside of the substrate
Conductive layer has a first portion on the concave or convex portion of the via and a second portion on the isolation film
Passivation layer partially covers the conductive layer

Original Abstract Submitted

A semiconductor device includes a through-substrate via extending from a frontside to a backside of a semiconductor substrate. The through-substrate via includes a concave or a convex portion adjacent to the backside of the semiconductor substrate. An isolation film is formed on the backside of the semiconductor substrate. A conductive layer includes a first portion formed on the concave or convex portion of the through substrate via and a second portion formed on the isolation film. A passivation layer partially covers the conductive layer.

US Patent Application 18447871. Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via simplified abstract

Contents

Semiconductor Device Having Backside Interconnect Structure on Through Substrate Via

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