US Patent Application 18448100. METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE simplified abstract

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METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Yu-Hao Chen of Hsinchu (TW)]]

[[Category:Hui Yu Lee of Hsinchu (TW)]]

[[Category:Jui-Feng Kuan of Hsinchu (TW)]]

METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18448100 titled 'METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE

Simplified Explanation

The patent application describes a method of manufacturing a semiconductor structure with an optical component and a thermal control mechanism.

  • The method involves surrounding the optical component with a first dielectric layer.
  • The thermal control mechanism is formed adjacent to the optical component and partially surrounded by the first dielectric layer.
  • The thermal control mechanism includes a first thermoelectric member with a certain conductivity type and a second thermoelectric member with the opposite conductivity type.
  • A conductive structure is formed over and electrically connected to the thermal control mechanism.
  • A second dielectric layer is formed over the first dielectric layer and surrounds the conductive structure.


Original Abstract Submitted

A method of manufacturing a semiconductor structure includes forming a first dielectric layer surrounding an optical component. The method further includes forming a thermal control mechanism adjacent to the optical component and at least partially surrounded by the first dielectric layer. Forming the thermal control mechanism includes forming a first thermoelectric member having a first conductivity type, forming a second thermoelectric member having a second conductivity type opposite to the first conductivity type, wherein the second thermoelectric member is opposite to the first thermoelectric member; and forming a conductive structure over and electrically connected to the thermal control mechanism. The method further includes forming a second dielectric layer over the first dielectric layer and surrounding the conductive structure.

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