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Category:H01L23/535
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Pages in category "H01L23/535"
The following 200 pages are in this category, out of 305 total.
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- 17527229. REPLACEMENT BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17528858. BOTTOM DIELECTRIC ISOLATION INTEGRATION WITH BURIED POWER RAIL simplified abstract (International Business Machines Corporation)
- 17576007. INTEGRATED CIRCUIT DEVICES INCLUDING A POWER RAIL AND METHODS OF FORMING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17577707. Semiconductor Devices with a Nitrided Capping Layer simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17704701. SEMICONDUCTOR DEVICE AND ELECTRONIC SYSTEM INCLUDING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17725300. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17725722. Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel Transistors simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17729477. SEMICONDUCTOR DEVICE, SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17743849. Semiconductor Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17805009. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING SUPPORT CONTACT STRUCTURES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17805221. MICROELECTRONIC DEVICES, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS simplified abstract (Micron Technology, Inc.)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17812141. MICROELECTRONIC DEVICES WITH CONTACTS EXTENDING THROUGH METAL OXIDE REGIONS OF STEP TREADS, AND RELATED SYSTEMS AND METHODS simplified abstract (Micron Technology, Inc.)
- 17816505. TECHNIQUES FOR CONCURRENTLY-FORMED CAVITIES IN THREE-DIMENSIONAL MEMORY ARRAYS simplified abstract (Micron Technology, Inc.)
- 17822421. MICROELECTRONIC DEVICES INCLUDING STADIUM STRUCTURES, AND RELATED MEMORY DEVICES AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17823472. METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED MICROELECTRONIC DEVICES, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17834940. SEMICONDUCTOR DEVICE WITH COMPOSITE CONTACT STRUCTURE simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 17835080. SEMICONDUCTOR DEVICE INCLUDING A NONVOLATILE VERTICAL MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17848021. MEMORY DEVICE INCLUDING HIGH-ASPECT-RATIO CONDUCTIVE CONTACTS simplified abstract (Micron Technology, Inc.)
- 17865565. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17875625. SEMICONDUCTOR STRUCTURE WITH AIR GAP AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17884853. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17885025. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17896919. STAIRCASE FORMATION IN A MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17897399. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17897516. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17900064. Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract (Micron Technology, Inc.)
- 17930656. MICROELECTRONIC DEVICES INCLUDING STAIRCASE STRUCTURES, AND RELATED METHODS, MEMORY DEVICES, AND ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ADVANCED MICRO DEVICES, INC.)
- 17937313. POWER VIA WITH REDUCED RESISTANCE simplified abstract (ATI TECHNOLOGIES ULC)
- 17940715. ACCESS CIRCUITRY STRUCTURES FOR THREE-DIMENSIONAL MEMORY ARRAY simplified abstract (Micron Technology, Inc.)
- 17944343. Memory Circuitry And Method Used In Forming Memory Circuitry simplified abstract (Micron Technology, Inc.)
- 17944437. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17955696. VERTICAL NON-VOLATILE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18045971. MEMORY DEVICE HAVING VERTICAL STRUCTURE AND MEMORY SYSTEM INCLUDING THE MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18053012. INTEGRATED CIRCUIT AND METHOD OF MANUFACTURING SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18054637. SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract (Micron Technology, Inc.)
- 18054730. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18059098. ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18065060. BACKSIDE DIRECT CONTACT FORMATION simplified abstract (International Business Machines Corporation)
- 18065799. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18067029. STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract (International Business Machines Corporation)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18089417. INTERCONNECT DEVICE AND METHOD simplified abstract (Intel Corporation)
- 18089491. LIQUID METAL WELLS FOR INTERCONNECT ARCHITECTURES simplified abstract (Intel Corporation)
- 18104328. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18122680. FULLY ALIGNED VIA TO SINGLE DAMASCENE UPPER TRENCH simplified abstract (International Business Machines Corporation)
- 18145034. STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract (International Business Machines Corporation)
- 18150809. SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18235766. INTEGRATED WORD LINE CONTACT STRUCTURES IN THREE-DIMENSIONAL (3D) MEMORY ARRAY simplified abstract (Intel Corporation)
- 18309113. SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18335172. POWER DISTRIBUTION WITH BACKSIDE POWER PLANES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18349017. NONVOLATILE MEMORY DEVICE, SYSTEM INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18398370. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF (SAMSUNG ELECTRONICS CO., LTD.)
- 18403044. INTERCONNECT STRUCUTRE WITH PROTECTIVE ETCH-STOP simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18405023. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18406745. THREE-DIMENSIONAL MEMORY DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18418720. NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18431346. REDUCING OXIDATION BY ETCHING SACRIFICIAL AND PROTECTION LAYER SEPARATELY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18432491. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE HAVING A SUPPORT PATTERN IN CONTACT WITH A SIDE SURFACE OF A CONTACT PLUG simplified abstract (SK hynix Inc.)
- 18446827. VERTICAL SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE VERTICAL SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
- 18466783. HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING (International Business Machines Corporation)
- 18471408. SELF-ALIGNED CONTACT FOR FIELD EFFECT TRANSISTORS (International Business Machines Corporation)
- 18471730. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18472243. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18476571. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18486148. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18491470. METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES BY ETCHING ACTIVE FINS USING ETCHING MASKS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18507138. GAP PATTERNING FOR METAL-TO-SOURCE/DRAIN PLUGS IN A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18514716. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18516373. HYBRID CONDUCTIVE STRUCTURES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18519862. CONTACT STRUCTURE OF A SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18555902. SEMICONDUCTOR DEVICE AND ETCHING METHOD simplified abstract (SONY SEMICONDUCTOR SOLUTIONS CORPORATION)
- 18591076. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18598173. SEMICONDUCTOR DEVICE WITH COMPOSITE CONDUCTIVE FEATURES AND METHOD FOR PREPARING THE SAME simplified abstract (NANYA TECHNOLOGY CORPORATION)
- 18599049. INTERNAL NODE JUMPER FOR MEMORY BIT CELLS simplified abstract (Intel Corporation)
- 18601027. SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18608383. SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18616019. INDUCTORS WITH THROUGH-SUBSTRATE VIA CORES simplified abstract (Micron Technology, Inc.)
- 18623507. METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract (Micron Technology, Inc.)
- 18628233. SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18650306. SEMICONDUCTOR DEVICE (Samsung Electronics Co., Ltd.)
- 18653815. GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME simplified abstract (Intel Corporation)
- 18734669. THREE-DIMENSIONAL DEVICE STRUCTURE INCLUDING SEAL RING CONNECTION CIRCUIT simplified abstract (Taiwan Semiconductor Manufacturing Company Limited)
- 18743862. Integrated Circuit Apparatus And Oscillator (SEIKO EPSON CORPORATION)
- 18745872. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS simplified abstract (Micron Technology, Inc.)
- 18752525. METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING DIFFERENTLY SIZED CONDUCTIVE CONTACT STRUCTURES simplified abstract (Micron Technology, Inc.)
- 18753766. CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation)
- 18756008. METHOD AND STRUCTURE FOR BARRIER-LESS PLUG simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18883389. Buffer and Inverter Transistors Embedded in Interconnect Metal Layers (Apple Inc.)
- 18883825. METHODS AND APPARATUS FOR STACKS OF GLASS LAYERS INCLUDING DEEP TRENCH CAPACITORS (Intel Corporation)
- 18888253. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18896414. THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF (Yangtze Memory Technologies Co., Ltd.)
- 18943201. THREE-DIMENSIONAL SEMICONDUCTOR DEVICE INCLUDING A THROUGH-VIA STRUCTURE HAVING A VIA LINER HAVING PROTRUDING PORTIONS (SAMSUNG ELECTRONICS CO., LTD.)
- 18955171. BOTTOM LATERAL EXPANSION OF CONTACT PLUGS THROUGH IMPLANTATION (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18961767. SEMICONDUCTOR MEMORY DEVICE INCLUDING WIRING CONTACT PLUGS (SAMSUNG ELECTRONICS CO., LTD.)
- 18968357. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18970741. Memory Arrays and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells (Micron Technology, Inc.)
- 18976693. SEMICONDUCTOR MEMORY DEVICES, METHODS FOR FABRICATING THE SAME AND ELECTRONIC SYSTEMS INCLUDING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18982005. PLASMA-DAMAGE-RESISTANT INTERCONNECT STRUCTURE AND METHODS FOR MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company Limited)
- 18989089. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18989132. STANDARD-CELL LAYOUT STRUCTURE WITH HORN POWER AND SMART METAL CUT (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999916. INTERNAL NODE JUMPER FOR MEMORY BIT CELLS (Intel Corporation)
- 19002450. CUT METAL GATE REFILL WITH VOID (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19004021. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP (Intel Corporation)
- 19005777. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19012003. SEMICONDUCTOR MEMORY DEVICE HAVING WORD LINES SURROUNDED BY MEMORY LAYERS AND METHOD OF MAKING THE SEMICONDUCTOR MEMORY DEVICE (Taiwan Semiconductor Manufacturing Company, Ltd.)
A
- Advanced micro devices, inc. (20240113022). POWER VIA WITH REDUCED RESISTANCE simplified abstract
- ADVANCED MICRO DEVICES, INC. patent applications on April 4th, 2024
- Apple inc. (20250105134). Buffer and Inverter Transistors Embedded in Interconnect Metal Layers
- Apple Inc. patent applications on March 27th, 2025
- Applied Materials, Inc. patent applications on February 13th, 2025
B
I
- Intel corporation (20240213154). INTERNAL NODE JUMPER FOR MEMORY BIT CELLS simplified abstract
- Intel corporation (20240213156). LIQUID METAL WELLS FOR INTERCONNECT ARCHITECTURES simplified abstract
- Intel corporation (20240213163). INTERCONNECT DEVICE AND METHOD simplified abstract
- Intel corporation (20240282633). GATE ALIGNED CONTACT AND METHOD TO FABRICATE SAME simplified abstract
- Intel corporation (20240347465). CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract
- Intel corporation (20240413016). TECHNIQUES AND CONFIGURATIONS TO REDUCE TRANSISTOR GATE SHORT DEFECTS
- Intel corporation (20250006665). METHODS AND APPARATUS FOR STACKS OF GLASS LAYERS INCLUDING DEEP TRENCH CAPACITORS
- Intel corporation (20250022936). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Intel corporation (20250125259). INTERNAL NODE JUMPER FOR MEMORY BIT CELLS
- Intel corporation (20250142935). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH REDUCED CAP
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on August 22nd, 2024
- Intel Corporation patent applications on December 12th, 2024
- Intel Corporation patent applications on January 16th, 2025
- Intel Corporation patent applications on January 23rd, 2025
- Intel Corporation patent applications on January 25th, 2024
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on June 27th, 2024
- Intel Corporation patent applications on May 1st, 2025
- Intel Corporation patent applications on October 17th, 2024
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240178050). ADJACENT BURIED POWER RAIL FOR STACKED FIELD-EFFECT TRANSISTOR ARCHITECTURE simplified abstract
- International business machines corporation (20240194528). BACKSIDE DIRECT CONTACT FORMATION simplified abstract
- International business machines corporation (20240203991). STRUCTURE AND METHOD TO FORM A STACK FIELD EFFECT TRANSISTOR WITH DIFFERENT CHANNEL ORIENTED GATE-ALL-AROUND DEVICES simplified abstract
- International business machines corporation (20240213248). STACKED TRANSISTORS HAVING SELF ALIGNED BACKSIDE CONTACT WITH BACKSIDE REPLACEMENT METAL GATE simplified abstract
- International business machines corporation (20240312839). FULLY ALIGNED VIA TO SINGLE DAMASCENE UPPER TRENCH simplified abstract
- International business machines corporation (20240332293). GATE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract
- International business machines corporation (20240413201). SELF-ALIGNED BACKSIDE CONTACT WITH PROTRUDING SOURCE/DRAIN
- International business machines corporation (20240421088). POWER DISTRIBUTION WITH BACKSIDE POWER PLANES
- International business machines corporation (20240429097). SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20240429098). MERGED SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20250087527). HANDLER WAFER WITH LOW OVERLAY RESIDUAL BACKSIDE PATTERNING
- International business machines corporation (20250105061). SELF-ALIGNED CONTACT FOR FIELD EFFECT TRANSISTORS
- International Business Machines Corporation patent applications on April 4th, 2024
- International Business Machines Corporation patent applications on December 12th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on December 19th, 2024
- International Business Machines Corporation patent applications on December 26th, 2024
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on January 25th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
- International Business Machines Corporation patent applications on June 20th, 2024
- International Business Machines Corporation patent applications on June 27th, 2024
- International Business Machines Corporation patent applications on March 13th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on March 14th, 2024
- International Business Machines Corporation patent applications on March 27th, 2025
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on May 30th, 2024
- International Business Machines Corporation patent applications on October 3rd, 2024
- International Business Machines Corporation patent applications on September 19th, 2024
M
- Micron technology, inc. (20240128207). NAND FLASH BLOCK ARCHITECTURE ENHANCEMENT TO PREVENT BLOCK LIFTING simplified abstract
- Micron technology, inc. (20240162154). SEMICONDUCTOR DEVICE HAVING CONTACT PLUG simplified abstract
- Micron technology, inc. (20240203791). Integrated Circuitry, A Memory Array Comprising Strings Of Memory Cells, A Method Used In Forming A Conductive Via, A Method Used In Forming A Memory Array Comprising Strings Of Memory Cells simplified abstract
- Micron technology, inc. (20240234324). INDUCTORS WITH THROUGH-SUBSTRATE VIA CORES simplified abstract
- Micron technology, inc. (20240250033). METHODS OF FORMING MICROELECTRONIC DEVICES simplified abstract
- Micron technology, inc. (20240292623). METHODS OF FORMING MICROELECTRONIC DEVICES, AND RELATED ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240339357). METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING VOIDS NEIGHBORING CONDUCTIVE CONTACTS, AND RELATED ELECTRONIC SYSTEMS simplified abstract
- Micron technology, inc. (20240347418). MEMORY DEVICE WITH LOW DENSITY THERMAL BARRIER simplified abstract
- Micron technology, inc. (20240347464). METHODS OF FORMING MICROELECTRONIC DEVICES INCLUDING DIFFERENTLY SIZED CONDUCTIVE CONTACT STRUCTURES simplified abstract
- Micron technology, inc. (20250096042). Memory Arrays and Methods Used in Forming a Memory Array Comprising Strings of Memory Cells
- Micron Technology, Inc. patent applications on April 18th, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 8th, 2024
- Micron Technology, Inc. patent applications on January 18th, 2024
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on July 25th, 2024
- Micron Technology, Inc. patent applications on June 20th, 2024
- Micron Technology, Inc. patent applications on March 14th, 2024
- Micron Technology, Inc. patent applications on March 20th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on October 10th, 2024
- Micron Technology, Inc. patent applications on October 17th, 2024
S
- Samsung electronics co., ltd. (20240120279). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240164103). NONVOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240206177). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240215253). SEMICONDUCTOR DEVICES AND DATA STORAGE SYSTEMS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240224525). SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240250034). SEMICONDUCTOR DEVICE AND DATA STORAGE SYSTEM INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240258239). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20240258239). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240274540). INTEGRATED CIRCUIT CHIP INCLUDING GATE ELECTRODE WITH OBLIQUE CUT SURFACE, AND MANUFACTURING METHOD OF THE SAME simplified abstract
- Samsung electronics co., ltd. (20240421090). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THEREOF