Samsung electronics co., ltd. (20240120279). SEMICONDUCTOR DEVICE simplified abstract
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jeong Hyuk Yim of Suwon-si (KR)
Hyo Seok Choi of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240120279 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a trench structure with multiple sub-trenches, a plug conductive film, a via, and wiring. The plug conductive film extends from one side of the trench to penetrate the bottom face, with its uppermost face in the trench. An insulating liner separates the plug conductive film from the trench walls, and the wiring is in contact with the plug conductive film. The upper face of the insulating liner is exposed by the bottom face of the sub-trench.
- Trench structure with multiple sub-trenches
- Plug conductive film extending through the trench
- Insulating liner separating the plug conductive film from the trench walls
- Wiring in contact with the plug conductive film
- Exposed upper face of the insulating liner by the sub-trench bottom face
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as integrated circuits and microprocessors.
Problems Solved
This innovation helps in improving the efficiency and performance of semiconductor devices by providing a more compact and reliable trench structure.
Benefits
The benefits of this technology include enhanced electrical conductivity, reduced signal interference, and increased overall functionality of semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the electronics industry for the production of high-performance electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar trench structures in semiconductor devices, but with different configurations and materials.
Unanswered Questions
How does this technology compare to existing trench structures in semiconductor devices?
This article does not provide a direct comparison to existing trench structures in semiconductor devices.
What are the specific materials used in the plug conductive film and insulating liner?
The article does not specify the exact materials used in the plug conductive film and insulating liner.
Original Abstract Submitted
a semiconductor device may include a first film and a second film defining parts of a trench, a plug conductive film, a via, and a wiring in the trench. the trench may include a second sub-trench having a second width below a first sub-trench having a first width. the plug conductive film may extend from a first side of the first film to penetrate a bottom face of the trench. an uppermost face of the plug conducive film may be in the trench. the via may include an insulating liner between the plug conductive film and the first film. the uppermost face of the plug conductive film and at least a part of a side wall of the plug conductive film may be in contact with the wiring. an upper face of the insulating liner may be exposed by a bottom face of the second sub-trench.