18888253. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Wataru Moriyama of Yokohama (JP)
Fumihiro Kono of Yokohama (JP)
Kiyoaki Iwasa of Yokohama (JP)
Tadashi Someya of Edogawa (JP)
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 18888253 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
A semiconductor memory device includes a plurality of word lines, a first select gate line, a second select gate line, a first semiconductor layer, a third select gate line, a fourth select gate line, a second semiconductor layer, and a word line contact electrode. The first select gate line and the third select gate line are farther from the substrate than the plurality of word lines. The second select gate line and the fourth select gate line are closer to the substrate than the plurality of word lines. The first semiconductor layer is opposed to the plurality of word lines, the first select gate line, and the second select gate line. The second semiconductor layer is opposed to the plurality of word lines, the third select gate line, and the fourth select gate line. The word line contact electrode is connected to one of the plurality of word lines.