18883389. Buffer and Inverter Transistors Embedded in Interconnect Metal Layers (Apple Inc.)
Buffer and Inverter Transistors Embedded in Interconnect Metal Layers
Organization Name
Inventor(s)
Saurabh P. Sinha of Austin TX US
Buffer and Inverter Transistors Embedded in Interconnect Metal Layers
This abstract first appeared for US patent application 18883389 titled 'Buffer and Inverter Transistors Embedded in Interconnect Metal Layers
Original Abstract Submitted
Integrated circuit devices with buffer transistors or inverter transistors formed between topside BEOL (back end of line) metal layers are described. The buffer or inverter transistors include active regions and source/drains that can be formed in the spaces between topside metal layers. In certain instances, the transistors are formed in between metal layers furthest away from substrate. The transistors connect to routing either above or below the transistors to buffer and/or invert signals passing through the routing. For instance, the transistors may include active regions positioned between power and ground routings and connect to signal routing between the power and ground routings to boost and/or to invert the signal propagating along the signal routing. In various instances, the active regions of the transistors are formed by thin channel materials.