18989089. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Yung-Chih Tsai of Jhudong Township TW
Yu-Chung Yang of Hsinchu City TW
Alexander Kalnitsky of San Francisco CA US
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18989089 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A semiconductor structure includes a substrate and a dielectric material disposed over the substrate. A void is disposed within the dielectric material. A dielectric liner is disposed along inner sidewalls of the dielectric material proximate to the void. An inner surface of the dielectric liner defines an outer extent of the void, and the dielectric liner includes an inner liner layer and an outer liner layer.