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Category:G11C11/22
Subcategories
This category has the following 36 subcategories, out of 36 total.
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Pages in category "G11C11/22"
The following 196 pages are in this category, out of 196 total.
1
- 17726086. COMPUTE-IN-MEMORY DEVICE AND METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17818839. Three-Dimensional Memory Device and Method simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17821646. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17830100. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
- 17831368. ROBUST FUNCTIONALITY FOR MEMORY MANAGEMENT ASSOCIATED WITH HIGH-TEMPERATURE STORAGE AND OTHER CONDITIONS simplified abstract (Micron Technology, Inc.)
- 17836228. MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17840003. FERROELECTRIC TUNNEL JUNCTION MEMORY DEVICES WITH ENHANCED READ WINDOW simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17888298. STORING BITS WITH CELLS IN A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17893672. WORD LINE DRIVERS FOR MULTIPLE-DIE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17898923. Word Line Precharging Systems and Methods simplified abstract (Micron Technology, Inc.)
- 17899859. MEMORY ARRAY WITH COMPENSATED WORD LINE ACCESS DELAY simplified abstract (Micron Technology, Inc.)
- 17957591. SELECTIVE FERROELECTRIC DEPLOYMENT FOR SINGLE-TRANSISTOR, MULTIPLE-CAPACITOR DEVICES simplified abstract (Intel Corporation)
- 17957945. DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract (Intel Corporation)
- 17957957. MEMORY ARRAY COMPRISING A FERROELECTRIC DATA STORAGE ELEMENT simplified abstract (Intel Corporation)
- 17958395. INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract (Intel Corporation)
- 18053182. Ferroelectric Memory Device And Electronic Device Including The Same simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18060372. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18065195. NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract (International Business Machines Corporation)
- 18089670. FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18119180. THREE-DIMENSIONAL NON-VOLATILE MEMORY FLOORPLAN ARCHITECTURE simplified abstract (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18151483. MEMORY ARRAY AND OPERATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18156593. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18172027. FERROELECTRIC MEMORY DEVICE WITH MULTI-LEVEL BIT CELL simplified abstract (GlobalFoundries U.S. Inc.)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18217730. NON-VOLATILE MEMORY DEVICE AND SYSTEM INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18234636. READ CONTROL SIGNAL GENERATION FOR MEMORY simplified abstract (Micron Technology, Inc.)
- 18235740. Ferroelectric Assemblies and Methods of Forming Ferroelectric Assemblies simplified abstract (Micron Technology, Inc.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18369540. TARGETED COMMAND/ADDRESS PARITY LOW LIFT simplified abstract (Lodestar Licensing Group LLC)
- 18405792. MITIGATING DISTURBANCE OF DIGIT LINES AT PLATE EDGES simplified abstract (Micron Technology, Inc.)
- 18418880. FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18420171. FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18429677. Integrated Assemblies and Methods of Forming Integrated Assemblies simplified abstract (Micron Technology, Inc.)
- 18434848. READING METHOD AND READING CIRCUIT OF FRAM simplified abstract (ZHEJIANG UNIVERSITY)
- 18447997. FERROELECTRIC FIELD-EFFECT TRANSISTOR (FeFET) MEMORY simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18459962. NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract (Kioxia Corporation)
- 18477272. Efficient Memory Operation Using a Destructive Read Memory Array (Advanced Micro Devices, Inc.)
- 18486493. DOMAIN SWITCHING DEVICES AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18493856. SIDEWALL SPACER STRUCTURE TO INCREASE SWITCHING PERFORMANCE OF FERROELECTRIC MEMORY DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18501360. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18506177. EMBEDDED FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18510975. GRID STRUCTURE TO REDUCE DOMAIN SIZE IN FERROELECTRIC MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18518090. PLATE LINE DRIVERS WITH A SHARED BIAS DEVICE simplified abstract (Micron Technology, Inc.)
- 18518716. METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18518736. MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521872. SWITCH AND HOLD BIASING FOR MEMORY CELL IMPRINT RECOVERY simplified abstract (Micron Technology, Inc.)
- 18524708. WORD LINE VOLTAGE CONTROL FOR REDUCED VOLTAGE DISTURBANCE DURING MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 18525301. ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18528451. WORD LINE CHARGE INTEGRATION simplified abstract (Micron Technology, Inc.)
- 18532826. METHOD FOR MAPPING AN INPUT VECTOR TO AN OUTPUT VECTOR BY MEANS OF A MATRIX CIRCUIT simplified abstract (Robert Bosch GmbH)
- 18589184. READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18590282. FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18602041. METHOD FOR FABRICATING MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18604227. ERROR CORRECTION MEMORY DEVICE WITH FAST DATA ACCESS simplified abstract (Micron Technology, Inc.)
- 18605714. BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18615398. MEMORY CIRCUIT AND WRITE METHOD simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18631842. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18636662. FERROELECTRIC STORAGE APPARATUS AND MANUFACTURING METHOD OF CONDUCTIVE PROBE simplified abstract (Resonac Corporation)
- 18669795. DEVICE AND METHOD FOR PERFORMING MATRIX OPERATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18777046. FERROELECTRIC MEMORY CELL ACCESS (Micron Technology, Inc.)
- 18821042. APPARATUS AND MECHANISM FOR PROCESSING NEURAL NETWORK TASKS USING A SINGLE CHIP PACKAGE WITH MULTIPLE IDENTICAL DIES (GOOGLE LLC)
- 18884849. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18937428. STORING MEMORY ARRAY OPERATIONAL INFORMATION IN NON-VOLATILE SUBARRAYS (MICRON TECHNOLOGY, INC.)
- 18938961. MEMORY DEVICE WITH WRITE PULSE TRIMMING (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18948981. FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREASING ENDURANCE OF FERROELECTRIC MEMORY, AND DEVICE (HUAWEI TECHNOLOGIES CO., LTD.)
- 18966286. FERROELECTRIC MEMORY AND DATA READING METHOD AND DATA WRITING METHOD THEREFOR, AND ELECTRONIC APPARATUS (CXMT Corporation)
- 18977704. SEMICONDUCTOR DEVICES INCLUDING DECOUPLING CAPACITORS (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18990122. SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 19002398. SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS (Micron Technology, Inc.)
- 19011268. Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array (Micron Technology, Inc.)
- 19013585. SECURITY MANAGEMENT OF FERROELECTRIC MEMORY DEVICE (Micron Technology, Inc.)
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- Huawei technologies co., ltd. (20240130139). FERROELECTRIC MEMORY AND STORAGE DEVICE simplified abstract
- Huawei technologies co., ltd. (20240206189). FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract
- Huawei technologies co., ltd. (20250069634). FERROELECTRIC MEMORY, CONTROL APPARATUS THEREOF, METHOD FOR INCREASING ENDURANCE OF FERROELECTRIC MEMORY, AND DEVICE
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on April 18th, 2024
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on February 27th, 2025
- Huawei Technologies Co., Ltd. patent applications on January 30th, 2025
- HUAWEI TECHNOLOGIES CO., LTD. patent applications on June 20th, 2024
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- Intel corporation (20240105248). TCAM WITH HYSTERETIC OXIDE MEMORY CELLS simplified abstract
- Intel corporation (20240112730). DEVICE, METHOD AND SYSTEM TO PROVIDE A RANDOM ACCESS MEMORY WITH A FERROELECTRIC RESISTIVE JUNCTION simplified abstract
- Intel corporation (20240114692). INVERTED FERROELECTRIC AND ANTIFERROLECETRIC CAPACITORS simplified abstract
- Intel Corporation patent applications on April 4th, 2024
- Intel Corporation patent applications on March 28th, 2024
- International business machines corporation (20240194236). NEGATIVE CAPACITANCE FOR FERROELECTRIC CAPACITIVE MEMORY CELL simplified abstract
- International business machines corporation (20240224539). FERROELECTRIC-RAM WITH INTEGRATED DOMAIN REVERSAL CATALYST simplified abstract
- INTERNATIONAL BUSINESS MACHINES CORPORATION patent applications on July 4th, 2024
- International Business Machines Corporation patent applications on June 13th, 2024
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- Kioxia corporation (20240096389). NONVOLATILE SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREFOR simplified abstract
- Kioxia corporation (20250095692). SEMICONDUCTOR MEMORY DEVICE
- Kioxia Corporation patent applications on March 20th, 2025
- Kioxia Corporation patent applications on March 21st, 2024
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- Micron technology, inc. (20240127877). DIFFERENTIAL STORAGE IN MEMORY ARRAYS simplified abstract
- Micron technology, inc. (20240249762). MITIGATING DISTURBANCE OF DIGIT LINES AT PLATE EDGES simplified abstract
- Micron technology, inc. (20240257841). DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE
- Micron technology, inc. (20240257841). DYNAMIC ALLOCATION OF A CAPACITIVE COMPONENT IN A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240257855). MEMORY CELL SENSING ARCHITECTURE
- Micron technology, inc. (20240257855). MEMORY CELL SENSING ARCHITECTURE simplified abstract
- Micron technology, inc. (20240265960). Memory Arrays, Ferroelectric Transistors, and Methods of Reading and Writing Relative to Memory Cells of Memory Arrays simplified abstract
- Micron technology, inc. (20240281171). READ BROADCAST OPERATIONS ASSOCIATED WITH A MEMORY DEVICE simplified abstract
- Micron technology, inc. (20240290373). GENERATING ACCESS LINE VOLTAGES simplified abstract
- Micron technology, inc. (20240303158). ERROR CORRECTION MEMORY DEVICE WITH FAST DATA ACCESS simplified abstract
- Micron technology, inc. (20240412768). UNBALANCED PROGRAMMED DATA STATES IN MEMORY
- Micron technology, inc. (20240428839). APPARATUSES, SYSTEMS, AND METHODS FOR CONFIGURABLE MEMORY
- Micron technology, inc. (20250014623). FERROELECTRIC MEMORY CELL ACCESS
- Micron technology, inc. (20250130908). STORING MEMORY ARRAY OPERATIONAL INFORMATION IN NON-VOLATILE SUBARRAYS
- Micron technology, inc. (20250140298). Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array
- Micron technology, inc. (20250142840). SEMICONDUCTOR DEVICES AND HYBRID TRANSISTORS
- Micron technology, inc. (20250148133). SECURITY MANAGEMENT OF FERROELECTRIC MEMORY DEVICE
- Micron Technology, Inc. patent applications on April 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on April 24th, 2025
- Micron Technology, Inc. patent applications on August 1st, 2024
- Micron Technology, Inc. patent applications on August 22nd, 2024
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on August 8th, 2024
- Micron Technology, Inc. patent applications on December 12th, 2024
- Micron Technology, Inc. patent applications on December 26th, 2024
- Micron Technology, Inc. patent applications on February 13th, 2025
- Micron Technology, Inc. patent applications on February 15th, 2024
- Micron Technology, Inc. patent applications on February 20th, 2025
- Micron Technology, Inc. patent applications on February 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on January 9th, 2025
- Micron Technology, Inc. patent applications on July 25th, 2024
- Micron Technology, Inc. patent applications on May 1st, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 12th, 2024
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- Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
- Samsung electronics co., ltd. (20240257856). SEMICONDUCTOR DEVICE
- Samsung electronics co., ltd. (20240257856). SEMICONDUCTOR DEVICE simplified abstract
- Samsung electronics co., ltd. (20240428838). SYNAPSE DEVICE INCLUDING FERROELECTRIC FIELD EFFECT TRANSISTOR AND NEURAL NETWORK APPARATUS INCLUDING THE SAME
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on December 26th, 2024
- Samsung Electronics Co., Ltd. patent applications on February 13th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on February 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on January 23rd, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on January 23rd, 2025
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
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- Taiwan semiconductor manufacturing co., ltd. (20240096388). MEMORY CELL AND METHOD OF OPERATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240097032). METHOD OF WRITING TO OR ERASING MULTI-BIT MEMORY STORAGE DEVICE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240161803). FERROELECTRIC MEMORY OPERATION BIAS AND POWER DOMAINS simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240224538). BACK-END ACTIVE DEVICE AND LOGIC GATE simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20250105138). SEMICONDUCTOR DEVICES INCLUDING DECOUPLING CAPACITORS
- Taiwan semiconductor manufacturing co., ltd. (20250118367). MEMORY DEVICE WITH WRITE PULSE TRIMMING
- Taiwan semiconductor manufacturing co., ltd. (20250124960). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on January 25th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on July 4th, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 21st, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on March 27th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on May 16th, 2024
- Taiwan semiconductor manufacturing company, ltd. (20240114691). ANALOG NON-VOLATILE MEMORY DEVICE USING POLY FERRORELECTRIC FILM WITH RANDOM POLARIZATION DIRECTIONS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240215255). METHOD FOR FABRICATING MEMORY DEVICE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240233795). MEMORY CIRCUIT AND WRITE METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240242750). FERROELECTRIC FET-BASED CONTENT-ADDRESSABLE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240284679). THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240304230). DEVICE AND METHOD FOR PERFORMING MATRIX OPERATION simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379778). Memory Array Isolation Structures simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240379847). Memory Array Channel Regions simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381652). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381656). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381657). THREE-DIMENSIONAL MEMORY DEVICES simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250063736). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on April 4th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on August 22nd, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 13th, 2025
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 15th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 29th, 2024
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on February 8th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on January 18th, 2024
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on July 11th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on July 18th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on June 27th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 6th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on September 12th, 2024
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- US Patent Application 17829046. PMOS THRESHOLD COMPENSATION SENSE AMPLIFIER FOR FeRAM DEVICES simplified abstract
- US Patent Application 18202584. DRIVE STRENGTH CALIBRATION FOR MULTI-LEVEL SIGNALING simplified abstract
- US Patent Application 18245098. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE simplified abstract
- US Patent Application 18343972. Semiconductor Devices Including Ferroelectric Memory and Methods of Forming the Same simplified abstract
- US Patent Application 18366191. MEMORY DEVICE WITH CONTENT ADDRESSABLE MEMORY UNITS simplified abstract
- US Patent Application 18366740. THREE-DIMENSIONAL MEMORY DEVICE AND METHOD simplified abstract
- US Patent Application 18446648. Semiconductor Devices Including Decoupling Capacitors simplified abstract