Micron technology, inc. (20240257855). MEMORY CELL SENSING ARCHITECTURE
MEMORY CELL SENSING ARCHITECTURE
Organization Name
Inventor(s)
Daniele Vimercati of El Dorado Hills CA US
Eric Carman of San Francisco CA US
MEMORY CELL SENSING ARCHITECTURE
This abstract first appeared for US patent application 20240257855 titled 'MEMORY CELL SENSING ARCHITECTURE
Original Abstract Submitted
techniques and configurations for electronic memory are described. an apparatus may include a first set of memory cells coupled with a first plate line and a word line, where a memory cell in the first set of memory cells may be coupled with a first bit line, and a second set of memory cells coupled with a second plate line and the word line, where a memory cell of the second set of memory cells may be coupled with a second bit line. the apparatus may also include a sense component having a first node coupled with the first bit line and a first capacitor and a second node coupled with the second bit line and a second capacitor. also, a set of capacitors may be coupled with both nodes. the capacitors may support adjustment of the voltage of the nodes of the sense component.