Jump to content

Category:Ruilong Xie of Niskayuna NY US

From WikiPatents

Ruilong Xie

Ruilong Xie from Niskayuna NY US has applied for patents in technology areas such as H01L23/48, H01L21/8238, H01L27/092 with international business machines corporation.

Patents

BACKSIDE OFFSET GATE CONTACT FOR BACKSIDE SPACING (20250096074)

Pages in category "Ruilong Xie of Niskayuna NY US"

The following 150 pages are in this category, out of 150 total.

1

18370611. SEMICONDUCTOR DEVICE WITH GATE CONTACT OVER AN ACTIVE REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18371889. STACKED FETS CONTAINING DIFFERENT SHAPED INNER SPACERS (International Business Machines Corporation)
18374881. FIELD-EFFECT TRANSISTOR CRESCENT-SHAPED DIELECTRIC ISOLATION (International Business Machines Corporation)
18374924. SEMICONDUCTOR STRUCTURE WITH PLACEHOLDER POSITION MARGIN (International Business Machines Corporation)
18377672. DUAL SIDE STACKED TRANSISTOR (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18378803. LATE SRAM CUT WITH BACKSIDE CONTACT (International Business Machines Corporation)
18379353. CO-INTEGRATION OF S/D METAL CONTACT CUT AND WRAP-AROUND-CONTACT (International Business Machines Corporation)
18382471. HYBRID HIGH BANDWIDTH MEMORY STACK (International Business Machines Corporation)
18388074. MODULE-LESS NANOSHEET FETS WITH DIRECT BACKSIDE CONTACT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18466871. METAL INSULATOR METAL CAPACITOR (MIM CAPACITOR) (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18468279. DIELECTRIC AND TWO-DIMENSIONAL SEMICONDUCTOR MATERIAL NANOSHEET DEVICES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18468729. BACKSIDE OFFSET GATE CONTACT FOR BACKSIDE SPACING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18468977. NANOSHEET DEVICE WITH ALIGNED ISOLATION AND EPITAXIAL GROWTH (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18469618. METAL TIP-TO-TIP SCALING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18469836. BOTTOM CONTACT JUMPERS FOR STACKED FIELD EFFECT TRANSISTOR SEMICONDUCTORS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470117. CMOS INTEGRATION FOR DOPED PLACEHOLDER AS DIRECT BACKSIDE CONTACT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470354. STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470646. BACKSIDE RESISTOR CONNECTED TO BACKSIDE BACK END OF LINE NETWORK (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470655. BACKSIDE FUSE CONNECTED TO BACKSIDE BACK END OF THE LINE NETWORK (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470664. BACKSIDE FUSE STRUCTURE UTILIZING BACKSIDE CONTACT (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18470669. SOURCE/DRAIN REGIONS FOR NANOSHEET DEVICES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18471408. SELF-ALIGNED CONTACT FOR FIELD EFFECT TRANSISTORS (International Business Machines Corporation)
18471645. SPACER TO AVOID SOURCE AND DRAIN SHORTING (International Business Machines Corporation)
18471778. SPACER PROTECTING SEMICONDUCTOR SUBSTRATE UNDER PASSIVE DEVICE DURING BACKSIDE CONTACT FORMATION (International Business Machines Corporation)
18472470. SPACER MODIFICATION FOR SELECTIVE AIRGAP SPACER FORMATION (International Business Machines Corporation)
18474574. GATE METAL JUMPER IN STACKED FET SRAM (International Business Machines Corporation)
18476545. DUAL-SIDE BRIDGE CHIPS CONNECTING TWO SEMICONDUCTOR CHIPS WITH STACKED SEMICONDUCTOR DEVICES (International Business Machines Corporation)
18476816. ACTIVE PRIME REGION WITH CONDUCTIVE BYPASS (International Business Machines Corporation)
18482213. ELECTRONIC FUSE VIA AND LOGIC DEVICE CO-INTEGRATION WITH BACKSIDE POWER DELIVERY NETWORK (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18483913. CUT SHAPES FOR BACKSIDE METALS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18484470. SELF-ALIGNED TOPVIA AND METAL LINE WITH INCREASED HEIGHT (International Business Machines Corporation)
18484550. LOGIC AND MEMORY DEVICE WITH COMMON VERTICAL CHANNEL (International Business Machines Corporation)
18485346. LINE-VIA-LINE STRUCTURE FOR BSPDN (International Business Machines Corporation)
18486724. GATE CUT STRUCTURE INCLUDING AN AIRGAP (International Business Machines Corporation)
18487156. FORKSHEET TRANSISTOR STRUCTURE (International Business Machines Corporation)
18488236. SEMICONDUCTOR STRUCTURES WITH MULTI-STAGE VIAS (International Business Machines Corporation)
18489056. STACKED FET WITH ASYMMETRIC CELL BOUNDARY (International Business Machines Corporation)
18490134. CONTACT PLACEHOLDER FORMATION FOR DIFFERENT DEVICE TYPES (International Business Machines Corporation)
18490298. ANGLED GATE CUT REGION (International Business Machines Corporation)
18490867. INNER SPACER HAVING A CURVED PORTION (International Business Machines Corporation)
18495832. BONDING A WAFER WITH A SUBSTRATE TO A WAFER WITH BACKSIDE INTERCONNECT WIRING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18497311. BOTTOM ISOLATION EXTENSION REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18498097. FORKSHEET TRANSISTOR WITH ADVANCED CELL HEIGHT SCALING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18499266. VIA CONNECTION IN MIDDLE BEOL WIRING (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18501129. SEMICONDUCTOR STRUCTURES WITH INTEGRATED ELECTROSTATIC DISCHARGE CLAMP CIRCUITS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18502125. FULL AND HALF SINGLE DIFFUSION BREAK WITH STACKED FET (INTERNATIONAL BUSINESS MACHINES CORPORATION)
18503322. FORKSHEET FIELD EFFECT TRANSISTOR INCLUDING T-SHAPED BACKBONE (INTERNATIONAL BUSINESS MACHINES CORPORATION)

2

I

P

Retrieved from "https://wikipatents.org/index.php?title=Category:Ruilong_Xie_of_Niskayuna_NY_US&oldid=350418"

Cookies help us deliver our services. By using our services, you agree to our use of cookies.