International business machines corporation (20250125250). LINE-VIA-LINE STRUCTURE FOR BSPDN
LINE-VIA-LINE STRUCTURE FOR BSPDN
Organization Name
international business machines corporation
Inventor(s)
Nicholas Anthony Lanzillo of Wynantskill NY US
Reinaldo Vega of Mahopac NY US
Lawrence A. Clevenger of Saratoga Springs NY US
Ruilong Xie of Niskayuna NY US
Brent A. Anderson of Jericho VT US
LINE-VIA-LINE STRUCTURE FOR BSPDN
This abstract first appeared for US patent application 20250125250 titled 'LINE-VIA-LINE STRUCTURE FOR BSPDN
Original Abstract Submitted
embodiments of present invention provide a semiconductor structure. the semiconductor structure includes a plurality of lower metal lines in a first metal level; a transition via directly on top of the plurality of lower metal lines; and an upper metal line directly on top of the transition via and the upper metal line being in a second metal level and orthogonal to the plurality of lower metal lines, where at least a first lower metal line of the plurality of lower metal lines has a recessed region and a rest region, the recessed region is directly underneath the transition via and filled with a dielectric material; and isolates the rest region of the first lower metal line from the transition via. a method of manufacturing the same is also provided.
- International business machines corporation
- Nicholas Anthony Lanzillo of Wynantskill NY US
- Albert M. Chu of Nashua NH US
- Reinaldo Vega of Mahopac NY US
- Lawrence A. Clevenger of Saratoga Springs NY US
- Ruilong Xie of Niskayuna NY US
- Brent A. Anderson of Jericho VT US
- H01L23/522
- H01L21/768
- H01L23/528
- H01L23/532
- CPC H01L23/5223