18487156. FORKSHEET TRANSISTOR STRUCTURE (International Business Machines Corporation)
FORKSHEET TRANSISTOR STRUCTURE
Organization Name
International Business Machines Corporation
Inventor(s)
Ruilong Xie of Niskayuna NY US
Tenko Yamashita of Schenectady NY US
Brent A. Anderson of Jericho VT US
FORKSHEET TRANSISTOR STRUCTURE
This abstract first appeared for US patent application 18487156 titled 'FORKSHEET TRANSISTOR STRUCTURE
Original Abstract Submitted
Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first and a second dielectric bar each having a left sidewall and a right sidewall; a first set of nanosheets having a first end and a second end that is directly adjacent to the left sidewall of the first dielectric bar; a first conductive layer surrounding the first set of nanosheets and directly adjacent to the left sidewall of the first dielectric bar; a second set of nanosheets having a first end and a second end that is directly adjacent to the left sidewall of the second dielectric bar; and a second conductive layer surrounding the second set of nanosheets; directly adjacent to the left sidewall of the second dielectric bar; and separating the second set of nanosheets from the right sidewall of the first dielectric bar. A method of forming the same is also provided.