SEMICONDUCTOR STRUCTURE WITH TWO AIR GAPS ON TWO SIDES OF A TOP SOURCE-DRAIN MIDDLE-OF-LINE CONTACT VIA

Abstract: a semiconductor structure that includes a top source/drain (s/d) middle-of-line (mol) contact via including a first side and a second side. the semiconductor structure also includes a first air gap located adjacent the first side of the top s/d mol contact via, and a second air gap located adjacent the second side of the top s/d mol contact via.