SHARED SOURCE/DRAIN CONTACT

Abstract: embodiments of present invention provide a semiconductor structure. the semiconductor structure includes a first transistor having a first source/drain (s/d) region; a second transistor having a second s/d region, the second s/d region being on top of the first s/d region; and a shared s/d contact, the shared s/d contact having a first portion being in direct contact with a bottom surface of the second s/d region of the second transistor and a second portion being wrapped around by the first s/d region of the first transistor. a method of forming the same is also provided.

Inventor(s): Lijuan Zou, Tao Li, Ruilong Xie, Min Gyu Sung

CPC Classification: H10D84/038 (No explanation available)

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