SELF-ALIGNED BACKSIDE CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE POWER DELIVERY

Abstract: a semiconductor structure includes a field effect transistor having a plurality of source/drain regions and a metal gate structure. a dielectric layer is in contact with a first surface of each of the plurality of source/drain regions, while a bottom dielectric isolation layer is in contact with a first surface of the metal gate structure. the bottom dielectric isolation layer is coplanar with the dielectric layer. the semiconductor structure further includes a backside metal contact that extends through a backside interlevel dielectric and the dielectric layer until an uppermost surface of at least one source/drain region of the plurality of source/drain regions. the backside interlevel dielectric is disposed above the dielectric layer and above the bottom dielectric isolation layer. the backside metal contact electrically connects the at least one source/drain region to a backside interconnect structure disposed above the backside interlevel dielectric.

Inventor(s): Huimei Zhou, Su Chen Fan, Ruilong Xie, Kisik Choi, Miaomiao Wang, Daniel Charles Edelstein

CPC Classification: H10D64/254 (No explanation available)

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