18470354. STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS
Organization Name
INTERNATIONAL BUSINESS MACHINES CORPORATION
Inventor(s)
Sagarika Mukesh of Albany NY US
Ruilong Xie of Niskayuna NY US
Alexander Reznicek of Troy NY US
Tsung-Sheng Kang of Ballston Lake NY US
STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS
This abstract first appeared for US patent application 18470354 titled 'STRAIN INDUCING TRENCHES FOR SOURCE/DRAIN REGIONS
Original Abstract Submitted
A semiconductor device comprises at least one epitaxial source/drain region, and a dielectric layer disposed in a trench in the at least one epitaxial source/drain region. The dielectric layer comprises one of a material with a negative coefficient of thermal expansion and a material with a positive coefficient of thermal expansion.