SEMICONDUCTOR CONTACT AREA MATCHING

Abstract: a semiconductor structure with matched frontside and backside source/drain contact areas is provided. the semiconductor structure includes a backside contact region, a first source/drain region disposed on the backside contact region, wherein a shared surface between the backside contact region and a backside of the first source/drain region forms a first contact area, inner spacers disposed on opposite sides of the first source/drain region, wherein the inner spacers control a size of first contact area, and a frontside interlayer dielectric disposed on the first source/drain region, wherein a shared surface between the frontside interlayer dielectric and a frontside of the first source/drain region forms a second contact area, wherein the size of the first contact area matches a size of the second contact area.

Inventor(s): Juntao Li, Ruilong Xie, Jingyun Zhang, Kisik Choi

CPC Classification: H10D62/121 (No explanation available)

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