BACKSIDE CONTACT CAP AND SPACER FOR BACKSIDE SIGNAL CONTACT ISOLATION

Abstract: a microelectronic structure a first nanosheet transistor that includes a first source/drain, and a second nanosheet transistor that is adjacent to the first nanosheet transistor. the second nanosheet transistor includes a second source/drain. a shared gate that extends between the first nanosheet transistor and the second nanosheet transistor. a gate protrusion that extends towards a backside region of the first nanosheet transistor and the backside region of the second nanosheet transistor. a first backside contact connected to first source/drain and a second backside contact connected to the second source/drain. a signal contact connected to the gate protrusion. an isolation layer located between the signal contact and first backside contact and the isolation layer is located between the signal contact and the second backside contact.

Inventor(s): Tsung-Sheng Kang, Tao Li, Ruilong Xie, Nicolas Jean Loubet

CPC Classification: H10D84/83 (No explanation available)

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