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Create the page "H01L29/10" on this wiki! See also the search results found.
- [[Category:H01L29/10]] [[Category:H01L29/40]]3 KB (387 words) - 02:37, 4 December 2023
- ...advanced integrated circuit structures, specifically those with a size of 10 nanometers or smaller. The method described involves forming multiple fins * It specifically focuses on structures with a size of 10 nanometers or smaller.5 KB (691 words) - 05:58, 1 January 2024
- [[Category:H01L29/10]] [[Category:H01L29/06]]3 KB (348 words) - 02:39, 4 December 2023
- [[Category:H01L29/417]] [[Category:H01L29/08]]2 KB (307 words) - 00:03, 17 March 2024
- [[Category:H01L29/78]] [[Category:H01L29/165]]2 KB (360 words) - 10:21, 1 December 2023
- [[Category:H01L29/24]] [[Category:H01L29/423]]2 KB (352 words) - 04:53, 5 December 2023
- [[Category:H01L29/10]] [[Category:H01L29/739]]3 KB (512 words) - 05:11, 12 January 2024
- [[Category:H01L29/10]] [[Category:H01L29/78]]2 KB (364 words) - 10:17, 1 December 2023
- [[Category:H01L29/10]] [[Category:H01L29/06]]2 KB (289 words) - 10:17, 1 December 2023
- [[Category:H01L29/06]] [[Category:H01L29/10]]4 KB (473 words) - 02:53, 16 April 2024
- ...concentration. The germanium concentration at each level is between 0% and 10%. * The germanium concentration at each level is between 0% and 10%.4 KB (564 words) - 12:27, 14 December 2023
- [[Category:H01L29/10]] [[Category:H01L29/78]]2 KB (263 words) - 10:17, 1 December 2023
- [[Category:H01L29/66]] [[Category:H01L29/06]]3 KB (420 words) - 08:44, 6 December 2023
- [[Category:H01L29/423]] [[Category:H01L29/49]]3 KB (354 words) - 15:30, 6 December 2023
- [[Category:H01L29/66]] [[Category:H01L29/786]]3 KB (395 words) - 04:53, 5 December 2023
- [[Category:H01L29/06]] [[Category:H01L29/10]]3 KB (440 words) - 11:11, 5 January 2024
- [[Category:H01L29/786]] [[Category:H01L29/08]]3 KB (497 words) - 08:19, 21 February 2024
- [[Category:H01L29/06]] [[Category:H01L29/08]]3 KB (402 words) - 04:53, 2 January 2024
- [[Category:H01L29/735]] [[Category:H01L29/08]]3 KB (408 words) - 12:47, 14 December 2023
- * The first SiGe layer has a germanium concentration of 10 to 40 atomic percent. ...the first semiconductor material has a first germanium concentration from 10 to 40 atomic percent, epitaxially growing a second semiconductor material o3 KB (399 words) - 02:39, 4 December 2023