US Patent Application 18363077. INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE simplified abstract

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.==Inventor(s)==

[[Category:Hsin Fu Lin of Hsinchu County (TW)]]

[[Category:Tsung-Hao Yeh of Hsinchu City (TW)]]

INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18363077 titled 'INTEGRATION OF LOW AND HIGH VOLTAGE DEVICES ON SUBSTRATE

Simplified Explanation

The patent application is about a semiconductor structure that includes a well region and a semiconductor substrate.

• The well region is located within the semiconductor substrate.
• The well region consists of multiple first regions and second regions.
• The first regions have a different doping than the second regions.
• A gate electrode is positioned over the well region.
• The gate electrode covers a portion of the first regions and a portion of the second regions.

Original Abstract Submitted

The present disclosure relates to a semiconductor structure that includes a well region and a semiconductor substrate. The well region is disposed within the semiconductor substrate. The well region includes a plurality of first regions separated by a plurality of second regions, where the plurality of first regions is of a first doping and the plurality of second regions are of a second doping different than the first doping. A gate electrode overlies the well region where the gate electrode is disposed laterally over a portion of the plurality of first regions and a portion of the plurality of second regions.