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Category:Zhenming Zhou of San Jose CA (US)
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Pages in category "Zhenming Zhou of San Jose CA (US)"
The following 28 pages are in this category, out of 28 total.
1
- 17819826. DETECTING A MEMORY WRITE RELIABILITY RISK WITHOUT USING A WRITE VERIFY OPERATION simplified abstract (Micron Technology, Inc.)
- 17823191. PARTIAL BLOCK READ VOLTAGE OFFSET simplified abstract (Micron Technology, Inc.)
- 17830625. ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE simplified abstract (Micron Technology, Inc.)
- 17830802. DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17842278. ERROR AVOIDANCE FOR PARTIALLY PROGRAMMED BLOCKS OF A MEMORY DEVICE simplified abstract (Micron Technology, Inc.)
- 17858731. ADAPTIVE WEAR LEVELING FOR ENDURANCE COMPENSATION simplified abstract (Micron Technology, Inc.)
- 17874828. RELIABILITY BASED DATA VERIFICATION simplified abstract (Micron Technology, Inc.)
- 17876346. MEMORY CELL VOLTAGE LEVEL SELECTION simplified abstract (Micron Technology, Inc.)
- 17887244. VOLTAGE WINDOW ADJUSTMENT simplified abstract (Micron Technology, Inc.)
- 17887348. INDEPENDENT SENSING TIMES simplified abstract (Micron Technology, Inc.)
- 17888080. ADAPTIVE BITLINE VOLTAGE FOR MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17888171. ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17888225. ADAPTIVE SENSING TIME FOR MEMORY OPERATIONS simplified abstract (Micron Technology, Inc.)
- 17894528. ADAPTIVE ERROR AVOIDANCE IN THE MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 17897183. PROXIMITY BASED PARITY DATA MANAGEMENT simplified abstract (Micron Technology, Inc.)
- 17897184. PADDING IN FLASH MEMORY BLOCKS simplified abstract (Micron Technology, Inc.)
- 17898043. NAND DETECT EMPTY PAGE SCAN simplified abstract (Micron Technology, Inc.)
- 17938153. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17938307. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract (Micron Technology, Inc.)
- 17942977. READ LEVEL COMPENSATION FOR PARTIALLY PROGRAMMED BLOCKS OF MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18205083. MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS simplified abstract (Micron Technology, Inc.)
- 18388342. MANAGING WRITE DISTURB BASED ON IDENTIFICATION OF FREQUENTLY-WRITTEN MEMORY UNITS simplified abstract (Micron Technology, Inc.)
U
- US Patent Application 17752590. ADAPTIVE POROGRAMMING DELAY SCHEME IN A MEMORY SUB-SYSTEM simplified abstract
- US Patent Application 17830625. ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE simplified abstract
- US Patent Application 17830802. DYNAMIC READ LEVEL TRIM SELECTION FOR SCAN OPERATIONS OF MEMORY DEVICES simplified abstract
- US Patent Application 17887244. VOLTAGE WINDOW ADJUSTMENT simplified abstract
- US Patent Application 17938307. APPARATUS WITH READ LEVEL MANAGEMENT AND METHODS FOR OPERATING THE SAME simplified abstract