18205083. MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS simplified abstract (Micron Technology, Inc.)
MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS
Organization Name
Inventor(s)
Zhenming Zhou of San Jose CA (US)
MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18205083 titled 'MEMORY SUB-SYSTEM THRESHOLD VOLTAGE MODIFICATION OPERATIONS
Simplified Explanation
The abstract describes a method for determining and optimizing the quality characteristics of memory dice in a memory device. The method involves binning information related to the quality characteristics of each memory dice and performing a select gate scan to determine threshold voltages and windows. Based on the determined quality characteristics, an erase and program operation is performed to set a second threshold voltage and window for a subset of memory dice.
- The method determines and categorizes the quality characteristics of memory dice in a memory device.
- A select gate scan is performed to determine the first threshold voltage and window for each memory dice.
- Based on the quality characteristics, a subset of memory dice is identified for optimization.
- An erase and program operation is performed to set a second threshold voltage and window for the identified subset.
- The second threshold voltage window is greater than the first threshold voltage window.
Potential Applications
- Memory device manufacturing and optimization.
- Quality control in memory device production.
- Improving the performance and reliability of memory devices.
Problems Solved
- Inefficient optimization of memory dice in a memory device.
- Lack of a systematic approach to determine and optimize quality characteristics.
- Difficulty in achieving desired threshold voltage and window for memory dice.
Benefits
- Enhanced quality control and optimization of memory devices.
- Improved performance and reliability of memory devices.
- Efficient and systematic approach to determine and set threshold voltages and windows.
Original Abstract Submitted
A method includes determining, for a plurality of memory dice, binning information relating to quality characteristics of each of the plurality of memory dice. The method further includes performing a select gate scan to determine a first threshold voltage and a first threshold voltage window of each of the plurality of memory dice, and, based on the determined quality characteristics of each of the plurality of memory dice, perform an erase and program operation to set a second threshold voltage with a second threshold voltage window of a subset of memory dice among the plurality of memory dice where the second threshold voltage window is greater than the first threshold voltage window.
