17830625. ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE simplified abstract (Micron Technology, Inc.)

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ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE

Organization Name

Micron Technology, Inc.

Inventor(s)

Zhenming Zhou of San Jose CA (US)

Murong Lang of San Jose CA (US)

Ching-Huang Lu of Fremont CA (US)

Nagendra Prasad Ganesh Rao of Folsom CA (US)

ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 17830625 titled 'ADAPTIVE ENHANCED CORRECTIVE READ BASED ON WRITE AND READ TEMPERATURE

Simplified Explanation

The patent application describes a system that includes a memory device and a processing device. The system performs operations to improve the reliability and performance of the memory device.

  • The system receives a request to read a specific segment of the memory device.
  • It determines the program erase cycle count associated with the segment, which indicates the number of times the segment has been programmed and erased.
  • The system also determines a temperature offset value for the segment based on the write temperature and read temperature.
  • It checks whether the temperature offset value meets a threshold criterion associated with the program erase cycle count.
  • If the temperature offset value satisfies the threshold criterion, the system performs a corrective read operation on the segment.
  • The sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.

Potential applications of this technology:

  • This technology can be used in various memory devices, such as flash memory, to improve their reliability and performance.
  • It can be implemented in devices like smartphones, tablets, and computers to enhance the overall user experience.

Problems solved by this technology:

  • Memory devices can experience errors and performance degradation over time due to repeated programming and erasing.
  • Temperature variations can further impact the reliability and performance of memory devices.
  • This technology addresses these issues by performing corrective read operations based on temperature offset values and program erase cycle counts.

Benefits of this technology:

  • By performing corrective read operations, the system can mitigate errors and improve the accuracy of data retrieval from memory devices.
  • The modification of the sense time parameter based on temperature offset values and program erase cycle counts helps optimize the read operation for better performance.
  • This technology enhances the overall reliability and lifespan of memory devices, leading to improved user satisfaction and reduced data loss.


Original Abstract Submitted

A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining a program erase cycle count associated with the segment of the memory device; determining a temperature offset value for the segment of the memory device based on a write temperature and a read temperature, determining whether the temperature offset value satisfies a threshold criterion associated with the program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.

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