Category:Brent A. Anderson of Jericho VT (US)
Brent A. Anderson of Jericho VT (US)
Executive Summary
Brent A. Anderson of Jericho VT (US) is an inventor who has filed 20 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (8 patents), Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor} (7 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (6 patents), and they have worked with companies such as International Business Machines Corporation (13 patents), INTERNATIONAL BUSINESS MACHINES CORPORATION (7 patents). Their most frequent collaborators include (18 collaborations), (13 collaborations), (12 collaborations).
Patent Filing Activity
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Technology Areas
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List of Technology Areas
- H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 8 patents
- H01L23/481 (Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor}): 7 patents
- H01L27/088 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 6 patents
- H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 6 patents
- H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/66439 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L23/5286 ({Geometry or} layout of the interconnection structure {(): 4 patents
- H01L21/823475 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 3 patents
- H01L23/564 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H01L23/585 ({comprising conductive layers or plates or strips or rods or rings (): 3 patents
- H01L23/60 (Protection against electrostatic charges or discharges, e.g. Faraday shields): 3 patents
- H01L23/562 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H01L23/5283 ({Geometry or} layout of the interconnection structure {(): 3 patents
- H10D64/258 (No explanation available): 3 patents
- H10D30/014 (No explanation available): 3 patents
- H10D30/43 (No explanation available): 3 patents
- H10D30/6735 (No explanation available): 3 patents
- H10D30/6757 (No explanation available): 3 patents
- H10D62/121 (No explanation available): 3 patents
- H01L21/823412 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L21/823418 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L29/6656 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 2 patents
- H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L21/76804 ({by forming tapered via holes}): 2 patents
- H01L21/76898 ({formed through a semiconductor substrate}): 2 patents
- H01L23/528 ({Geometry or} layout of the interconnection structure {(): 2 patents
- H01L25/0657 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L2225/06541 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H01L21/76816 ({Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per se): 2 patents
- H10D30/6729 (No explanation available): 2 patents
- H10D64/017 (No explanation available): 2 patents
- H10D84/038 (No explanation available): 2 patents
- H10D84/83 (No explanation available): 2 patents
- H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/823468 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L24/16 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L2224/16227 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L2924/14 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L23/5223 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/768 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
- H01L24/05 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L24/08 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L2224/08145 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L2924/19041 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L29/0649 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/76897 ({Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors): 1 patents
- H10D84/013 (No explanation available): 1 patents
- H10D84/0149 (No explanation available): 1 patents
- H01L21/823481 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/41725 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/308 (using masks (): 1 patents
- H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H10D84/017 (No explanation available): 1 patents
- H10D84/0186 (No explanation available): 1 patents
- H10D84/85 (No explanation available): 1 patents
- H01L23/5256 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/76229 (Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers}): 1 patents
- H01L21/76805 ({the opening being a via or contact hole penetrating the underlying conductor}): 1 patents
- H01L23/62 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/7682 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
- H01L21/76838 ({characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors): 1 patents
- H10D84/811 (No explanation available): 1 patents
- H01L23/5228 ({Resistive arrangements or effects of, or between, wiring layers (other resistive arrangements): 1 patents
- H10D1/474 (No explanation available): 1 patents
- H01L27/0928 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H10D64/254 (No explanation available): 1 patents
Companies
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List of Companies
- International Business Machines Corporation: 13 patents
- INTERNATIONAL BUSINESS MACHINES CORPORATION: 7 patents
Collaborators
- Ruilong Xie of Niskayuna NY (US) (18 collaborations)
- Lawrence A. Clevenger of Saratoga Springs NY (US) (13 collaborations)
- Albert M. Chu of Nashua NH (US) (12 collaborations)
- Junli Wang of Slingerlands NY (US) (5 collaborations)
- Jay William Strane of Wappingers Falls NY (US) (4 collaborations)
- Nicholas Alexander POLOMOFF of Hopewell Junction NY (US) (4 collaborations)
- Matthew Stephen Angyal of Stormville NY (US) (4 collaborations)
- Kisik Choi of Watervliet NY (US) (4 collaborations)
- Terence Hook of Jericho Center VT (US) (4 collaborations)
- LEI ZHUANG of Ridgefield CT (US) (4 collaborations)
- Nicholas Anthony Lanzillo of Wynantskill NY (US) (4 collaborations)
- FEE LI LIE of Albany NY (US) (3 collaborations)
- Reinaldo Vega of Mahopac NY (US) (3 collaborations)
- Ravikumar Ramachandran of Pleasantville NY (US) (2 collaborations)
- JENS HAETTY of Halfmoon NY (US) (2 collaborations)
- Christopher Murphy of Red Hook NY (US) (2 collaborations)
- FEE LI LIE of ALBANY NY (US) (1 collaborations)
- Nicholas Alexander Polomoff of Hopewell Junction NY (US) (1 collaborations)
- Yann Mignot of Slingerlands NY (US) (1 collaborations)
- Jay William Strane of Wappinger Falls NY (US) (1 collaborations)
- Shay Reboh of Guilderland NY (US) (1 collaborations)
- Albert M Chu of Nashua NH (US) (1 collaborations)
- Dan Moy of Bethel CT (US) (1 collaborations)
- Xiaoming Yang of Clifton Park NY (US) (1 collaborations)
- Takashi Ando of Eastchester NY (US) (1 collaborations)
- David Wolpert of Poughkeepsie NY (US) (1 collaborations)
Subcategories
This category has the following 5 subcategories, out of 5 total.
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Pages in category "Brent A. Anderson of Jericho VT (US)"
The following 122 pages are in this category, out of 122 total.
1
- 17524062. VERTICAL TRANSISTORS HAVING IMPROVED CONTROL OF PARASITIC CAPACITANCE AND GATE-TO-CONTACT SHORT CIRCUITS simplified abstract (International Business Machines Corporation)
- 17644528. CROSS BAR VERTICAL FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17943799. LINE EXTENSION FOR SKIP-LEVEL VIA LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17944437. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054160. BACKSIDE PROGRAMMABLE GATE ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054161. BACKSIDE PROGRAMMABLE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054187. METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054194. STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062624. POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (International Business Machines Corporation)
- 18063956. STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)
- 18067148. HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (International Business Machines Corporation)
- 18067207. HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS simplified abstract (International Business Machines Corporation)
- 18068123. SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract (International Business Machines Corporation)
- 18069077. VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (International Business Machines Corporation)
- 18079079. CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract (International Business Machines Corporation)
- 18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation)
- 18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation)
- 18086229. VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract (International Business Machines Corporation)
- 18093713. VIA STRUCTURE WITHOUT LINER INTERFACE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)
- 18150814. SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18158505. BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract (International Business Machines Corporation)
- 18176551. SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18178570. FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18182412. SELF-ALIGNED VIA IN DOUBLE DIFFUSION BREAK TO CONNECT TO BACKSIDE INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 18188042. STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188736. IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18214642. STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE (International Business Machines Corporation)
- 18216328. Three Dimensional Crackstop Interweave Architectural Design Using Supervia. (International Business Machines Corporation)
- 18216887. DOUBLE-SIDED INTEGRATED CIRCUIT WITH STABILIZING CAGE (International Business Machines Corporation)
- 18216923. DOUBLE-SIDED INTEGRATED CIRCUIT WITH ELECTROSTATIC GUARD RING (International Business Machines Corporation)
- 18216978. DOUBLE-SIDED INTEGRATED CIRCUIT WITH DAMAGE SENSOR (International Business Machines Corporation)
- 18217008. THREE DIMENSIONAL MECHANICALLY BOLTING STAPLE FILL (International Business Machines Corporation)
- 18297996. AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)
- 18333819. INVERTED GATE CUT REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333832. INVERTED GATE CUT REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333863. REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333953. CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334414. INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334606. STRUCTURE FOR BACKSIDE SIGNAL AND POWER (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334817. STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18337318. STACKED DEVICES WITH BACKSIDE CONTACTS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18345540. PITCH CHANGE BETWEEN METAL LINES (International Business Machines Corporation)
- 18464369. DUAL SIDED CIRCUIT CONNECTIONS (International Business Machines Corporation)
I
- International business machines corporation (20240096751). SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract
- International business machines corporation (20240096786). SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240105506). LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA simplified abstract
- International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract
- International business machines corporation (20240105611). BACKSIDE SIGNAL INTEGRATION THROUGH VIA TO SIGNAL LINE CONNECTION simplified abstract
- International business machines corporation (20240105612). BACKSIDE POWER DISTRIBUTION NETWORK AND BACKSIDE SINGLE CRYSTAL TRANSISTORS simplified abstract
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
- International business machines corporation (20240112985). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
- International business machines corporation (20240113176). FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract
- International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International business machines corporation (20240162139). METHOD AND STRUCTURE OF FORMING BARRIER-LESS SKIP VIA WITH SUBTRACTIVE METAL PATTERNING simplified abstract
- International business machines corporation (20240162229). STACKED FET WITH EXTREMELY SMALL CELL HEIGHT simplified abstract
- International business machines corporation (20240162231). BACKSIDE PROGRAMMABLE GATE ARRAY simplified abstract
- International business machines corporation (20240164089). BACKSIDE PROGRAMMABLE MEMORY simplified abstract
- International business machines corporation (20240186375). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240186376). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240194601). POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract
- International business machines corporation (20240194681). CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract
- International business machines corporation (20240196586). STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS simplified abstract
- International business machines corporation (20240203816). HEAT DISSIPATION STRUCTURES FOR BONDED WAFERS simplified abstract
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract
- International business machines corporation (20240203880). SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract
- International business machines corporation (20240203985). STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract
- International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract
- International business machines corporation (20240203996). HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract
- International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract
- International business machines corporation (20240213252). VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract
- International business machines corporation (20240234297). VIA STRUCTURE WITHOUT LINER INTERFACE simplified abstract
- International business machines corporation (20240234415). SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract
- International business machines corporation (20240234523). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International business machines corporation (20240250136). BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract
- International business machines corporation (20240290713). PASS-THROUGH WIRING IN NOTCHED INTERCONNECT simplified abstract
- International business machines corporation (20240297167). SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES simplified abstract
- International business machines corporation (20240304519). FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL simplified abstract
- International business machines corporation (20240312912). SELF-ALIGNED VIA IN DOUBLE DIFFUSION BREAK TO CONNECT TO BACKSIDE INTERCONNECTS simplified abstract
- International business machines corporation (20240321748). IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION simplified abstract
- International business machines corporation (20240321879). STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract
- International business machines corporation (20240332293). GATE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract
- International business machines corporation (20240339452). AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS simplified abstract
- International business machines corporation (20240420959). INVERTED GATE CUT REGION
- International business machines corporation (20240420960). INVERTED GATE CUT REGION
- International business machines corporation (20240421038). STACKED DEVICES WITH BACKSIDE CONTACTS
- International business machines corporation (20240421078). REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE
- International business machines corporation (20240421079). INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES
- International business machines corporation (20240421087). STRUCTURE FOR BACKSIDE SIGNAL AND POWER
- International business machines corporation (20240421145). CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS
- International business machines corporation (20240421156). STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH
- International business machines corporation (20240429098). MERGED SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20240429178). MONOLITH STRUCTURE FOR BSPDN SEMICONDUCTOR DEVICES
- International business machines corporation (20250089336). DUAL SIDED CIRCUIT CONNECTIONS
Categories:
- Ruilong Xie of Niskayuna NY (US)
- Lawrence A. Clevenger of Saratoga Springs NY (US)
- Albert M. Chu of Nashua NH (US)
- Junli Wang of Slingerlands NY (US)
- Jay William Strane of Wappingers Falls NY (US)
- Nicholas Alexander POLOMOFF of Hopewell Junction NY (US)
- Matthew Stephen Angyal of Stormville NY (US)
- Kisik Choi of Watervliet NY (US)
- Terence Hook of Jericho Center VT (US)
- LEI ZHUANG of Ridgefield CT (US)
- Nicholas Anthony Lanzillo of Wynantskill NY (US)
- FEE LI LIE of Albany NY (US)
- Reinaldo Vega of Mahopac NY (US)
- Ravikumar Ramachandran of Pleasantville NY (US)
- JENS HAETTY of Halfmoon NY (US)
- Christopher Murphy of Red Hook NY (US)
- FEE LI LIE of ALBANY NY (US)
- Nicholas Alexander Polomoff of Hopewell Junction NY (US)
- Yann Mignot of Slingerlands NY (US)
- Jay William Strane of Wappinger Falls NY (US)
- Shay Reboh of Guilderland NY (US)
- Albert M Chu of Nashua NH (US)
- Dan Moy of Bethel CT (US)
- Xiaoming Yang of Clifton Park NY (US)
- Takashi Ando of Eastchester NY (US)
- David Wolpert of Poughkeepsie NY (US)
- Brent A. Anderson of Jericho VT (US)
- Inventors
- Inventors filing patents with INTERNATIONAL BUSINESS MACHINES CORPORATION
- Inventors filing patents with International Business Machines Corporation