STRUCTURE FOR BACKSIDE SIGNAL AND POWER

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Ruilong Xie of Niskayuna NY (US)

Albert M. Chu of Nashua NH (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Brent A. Anderson of Jericho VT (US)

Reinaldo Vega of Mahopac NY (US)

STRUCTURE FOR BACKSIDE SIGNAL AND POWER

This abstract first appeared for US patent application 18334606 titled 'STRUCTURE FOR BACKSIDE SIGNAL AND POWER

Original Abstract Submitted

According to the embodiment of the present invention, a semiconductor device includes a first nanodevice comprised of a plurality of first transistors and a second nanodevice comprised of a plurality of second transistors. The second nanodevice is located adjacent to and parallel to the first nanodevice along an x-axis. A first backside signal line and a second backside signal line are located at a cell boundary of the first nanodevice. A first gap exists between the first backside signal line and the second backside signal line.