INVERTED GATE CUT REGION

Organization Name

international business machines corporation

Inventor(s)

Ruilong Xie of Niskayuna NY (US)

Brent A. Anderson of Jericho VT (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Albert M. Chu of Nashua NH (US)

INVERTED GATE CUT REGION

This abstract first appeared for US patent application 20240420959 titled 'INVERTED GATE CUT REGION

Original Abstract Submitted

a semiconductor ic device includes an inverted gate cut region with a relatively larger bottom surface area compared to its top surface area. as a result, an associated gate structure may have a relatively larger top contact landing surface area relative to its bottom surface area. the inverted gate cut region may increase a propensity of a frontside gate contact to meld with the gate structure. the increased landing area further enables the frontside contact to be placed in further perimeter locations. the inverted gate cut region also results in improved resistance characteristics through the gate structure. specifically, the inverted gate cut region enables a wide region between a top channel and the inverted gate cut region that provides a relatively lower electrical resistance therethrough. similarly, the inverted gate cut region causes a bottom perimeter region with decreased conductive material therein which advantageously results in lower associated parasitic capacitances.