STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

Organization Name

INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor(s)

Biswanath Senapati of Mechanicville NY (US)

STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

This abstract first appeared for US patent application 18334817 titled 'STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH

Original Abstract Submitted

A semiconductor structure includes a first set of transistors in a first level, the first set of transistors having a first gate pitch and a first cell height, and a second set of transistors in a second level, the second set of transistors having a second gate pitch and a second cell height. The second level is vertically stacked over the first level, the first gate pitch is different than the second gate pitch, and the first cell height is different than the second cell height.