Category:Albert M. Chu of Nashua NH (US)
Albert M. Chu of Nashua NH (US)
Executive Summary
Albert M. Chu of Nashua NH (US) is an inventor who has filed 13 patents. Their primary areas of innovation include SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (5 patents), {using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate} (5 patents), SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (4 patents), and they have worked with companies such as International Business Machines Corporation (7 patents), INTERNATIONAL BUSINESS MACHINES CORPORATION (6 patents). Their most frequent collaborators include (12 collaborations), (12 collaborations), (5 collaborations).
Patent Filing Activity
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Technology Areas
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List of Technology Areas
- H01L27/088 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 5 patents
- H01L29/66545 ({using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate}): 5 patents
- H01L29/0673 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L29/42392 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L29/66439 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L29/775 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L29/78696 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 4 patents
- H01L23/481 (Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements {; Selection of materials therefor}): 3 patents
- H01L23/5286 ({Geometry or} layout of the interconnection structure {(): 3 patents
- H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 3 patents
- H01L23/5283 ({Geometry or} layout of the interconnection structure {(): 3 patents
- H10D64/258 (No explanation available): 3 patents
- H10D30/014 (No explanation available): 3 patents
- H10D30/43 (No explanation available): 3 patents
- H10D30/6735 (No explanation available): 3 patents
- H10D30/6757 (No explanation available): 3 patents
- H10D62/121 (No explanation available): 3 patents
- H10D64/017 (No explanation available): 3 patents
- H01L21/823412 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L21/823418 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L21/823475 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 2 patents
- H01L29/6656 ({using self aligned silicidation, i.e. salicide (formation of conductive layers comprising silicides): 2 patents
- H01L29/0847 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 2 patents
- H10D30/6729 (No explanation available): 2 patents
- H10D84/038 (No explanation available): 2 patents
- H10D84/83 (No explanation available): 2 patents
- H01L29/41733 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/823468 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L21/768 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
- H01L29/0649 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/76816 ({Aspects relating to the layout of the pattern or to the size of vias or trenches (layout of the interconnections per se): 1 patents
- H01L21/76897 ({Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step (self-aligned silicidation on field effect transistors): 1 patents
- H10D84/013 (No explanation available): 1 patents
- H10D84/0149 (No explanation available): 1 patents
- H01L21/823481 (to produce devices, e.g. integrated circuits, each consisting of a plurality of components): 1 patents
- H01L29/41725 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/308 (using masks (): 1 patents
- H01L29/401 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H01L21/7682 (Applying interconnections to be used for carrying current between separate components within a device {comprising conductors and dielectrics}): 1 patents
- H01L21/76838 ({characterised by the formation and the after-treatment of the conductors (etching for patterning the conductors): 1 patents
- H10D84/017 (No explanation available): 1 patents
- H10D84/0179 (No explanation available): 1 patents
- H10D84/85 (No explanation available): 1 patents
- H01L27/0928 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS): 1 patents
- H10D64/254 (No explanation available): 1 patents
Companies
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List of Companies
- International Business Machines Corporation: 7 patents
- INTERNATIONAL BUSINESS MACHINES CORPORATION: 6 patents
Collaborators
- Ruilong Xie of Niskayuna NY (US) (12 collaborations)
- Brent A. Anderson of Jericho VT (US) (12 collaborations)
- Lawrence A. Clevenger of Saratoga Springs NY (US) (5 collaborations)
- Junli Wang of Slingerlands NY (US) (5 collaborations)
- Jay William Strane of Wappingers Falls NY (US) (4 collaborations)
- Nicholas Anthony Lanzillo of Wynantskill NY (US) (4 collaborations)
- Reinaldo Vega of Mahopac NY (US) (3 collaborations)
- Ravikumar Ramachandran of Pleasantville NY (US) (2 collaborations)
- Jay William Strane of Wappinger Falls NY (US) (1 collaborations)
- Shay Reboh of Guilderland NY (US) (1 collaborations)
- Tao Li of Slingerlands NY (US) (1 collaborations)
- Nicolas Jean Loubet of Guilderland NY (US) (1 collaborations)
- Takashi Ando of Eastchester NY (US) (1 collaborations)
- David Wolpert of Poughkeepsie NY (US) (1 collaborations)
Subcategories
This category has the following 6 subcategories, out of 6 total.
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Pages in category "Albert M. Chu of Nashua NH (US)"
The following 118 pages are in this category, out of 118 total.
1
- 17806292. STACKED FIELD EFFECT TRANSISTOR simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808186. SEMICONDUCTOR DEVICE WITH POWER VIA simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808316. INTERCONNECT WITH TWO-DIMENSIONAL FREE ZERO LINE END ENCLOSURE simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809076. STACKED FIELD EFFECT TRANSISTOR CELL WITH CROSS-COUPLING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17846423. ENHANCED POWER AND SIGNAL FOR STACKED-FETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17896278. Barrier-Less Jumper Structure for Line-to-Line Connections simplified abstract (International Business Machines Corporation)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931767. INTEGRATED CIRCUIT CHIP WITH BACKSIDE POWER DELIVERY AND MULTIPLE TYPES OF BACKSIDE TO FRONTSIDE VIAS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17933874. HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17934195. SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract (International Business Machines Corporation)
- 17936393. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract (International Business Machines Corporation)
- 17936434. VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract (International Business Machines Corporation)
- 17943799. LINE EXTENSION FOR SKIP-LEVEL VIA LANDING simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945498. VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract (International Business Machines Corporation)
- 17956244. BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract (International Business Machines Corporation)
- 17957599. VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract (International Business Machines Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17969773. SELF-ALIGNED ZERO TRACK SKIP simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054160. BACKSIDE PROGRAMMABLE GATE ARRAY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18054161. BACKSIDE PROGRAMMABLE MEMORY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18062624. POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract (International Business Machines Corporation)
- 18063956. STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 18065663. LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract (International Business Machines Corporation)
- 18066243. CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract (International Business Machines Corporation)
- 18067148. HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract (International Business Machines Corporation)
- 18068123. SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract (International Business Machines Corporation)
- 18069077. VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract (International Business Machines Corporation)
- 18069769. RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract (International Business Machines Corporation)
- 18079079. CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract (International Business Machines Corporation)
- 18081795. STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract (International Business Machines Corporation)
- 18083818. FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract (International Business Machines Corporation)
- 18086229. VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract (International Business Machines Corporation)
- 18097185. HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract (International Business Machines Corporation)
- 18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)
- 18150814. SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18158505. BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract (International Business Machines Corporation)
- 18176551. SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18178570. FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18180887. CROSS COUPLED STACKED TRANSISTORS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18182412. SELF-ALIGNED VIA IN DOUBLE DIFFUSION BREAK TO CONNECT TO BACKSIDE INTERCONNECTS simplified abstract (International Business Machines Corporation)
- 18188042. STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18188736. IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18214642. STACKED FET WITH LOW PARASITIC-CAPACITANCE GATE (International Business Machines Corporation)
- 18297996. AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS simplified abstract (International Business Machines Corporation)
- 18333819. INVERTED GATE CUT REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333832. INVERTED GATE CUT REGION (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333863. REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18333953. CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334414. INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334606. STRUCTURE FOR BACKSIDE SIGNAL AND POWER (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18334817. STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18336683. LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18337318. STACKED DEVICES WITH BACKSIDE CONTACTS (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18345540. PITCH CHANGE BETWEEN METAL LINES (International Business Machines Corporation)
- 18464369. DUAL SIDED CIRCUIT CONNECTIONS (International Business Machines Corporation)
I
- International business machines corporation (20240096692). HYBRID DAMASCENE INTERCONNECT STRUCTURE FOR SIGNAL AND POWER VIA CONNECTIONS simplified abstract
- International business machines corporation (20240096786). SUBTRACTIVES LINES AND VIAS WITH WRAP-AROUND CONTACT simplified abstract
- International business machines corporation (20240096794). VTFET CIRCUIT WITH OPTIMIZED OUTPUT simplified abstract
- International business machines corporation (20240105506). LOCAL LINE EXTENSION FOR ENLARGED VIA-TO-LINE CONTACT AREA simplified abstract
- International business machines corporation (20240105583). INTERCONNECT STRUCTURE WITH INCREASED DECOUPLING CAPACITANCE simplified abstract
- International business machines corporation (20240105608). LOCAL FRONTSIDE POWER RAIL WITH GLOBAL BACKSIDE POWER DELIVERY simplified abstract
- International business machines corporation (20240105610). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE GATE CONTACT simplified abstract
- International business machines corporation (20240105841). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH HIGH PERFORMANCE OUTPUT simplified abstract
- International business machines corporation (20240113021). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS WITH SHARED BACKSIDE POWER SUPPLY simplified abstract
- International business machines corporation (20240113178). VTFETS WITH WRAP-AROUND BACKSIDE CONTACTS simplified abstract
- International business machines corporation (20240113219). VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN CONNECTIONS simplified abstract
- International business machines corporation (20240114699). BACKSIDE MRAM WITH FRONTSIDE DEVICES simplified abstract
- International business machines corporation (20240120256). Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract
- International business machines corporation (20240136281). SELF-ALIGNED ZERO TRACK SKIP simplified abstract
- International business machines corporation (20240136414). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International business machines corporation (20240162231). BACKSIDE PROGRAMMABLE GATE ARRAY simplified abstract
- International business machines corporation (20240164089). BACKSIDE PROGRAMMABLE MEMORY simplified abstract
- International business machines corporation (20240186245). REDUCED CAPACITANCE BETWEEN POWER VIA BAR AND GATES simplified abstract
- International business machines corporation (20240186324). LATCH CROSS COUPLE FOR STACKED AND STEPPED FET simplified abstract
- International business machines corporation (20240186375). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240186376). VERTICAL TRANSISTOR WITH REDUCED CELL HEIGHT simplified abstract
- International business machines corporation (20240194601). POWER TAP CELL FOR FRONT SIDE POWER RAIL CONNECTION TO BSPDN simplified abstract
- International business machines corporation (20240194681). CIRCUIT LAYOUTS WITH VARIABLE CIRCUIT CELL HEIGHTS IN THE SAME CIRCUIT ROW simplified abstract
- International business machines corporation (20240196586). STACKED AND NON-STACKED TRANSISTORS WITH DOUBLE-SIDED INTERCONNECTS simplified abstract
- International business machines corporation (20240203870). FLEXIBLE MOL AND/OR BEOL STRUCTURE simplified abstract
- International business machines corporation (20240203880). SEMICONDUCTOR DEVICE WITH POWER SUPPLY DISTRIBUTION NETWORKS ON FRONTSIDE AND BACKSIDE OF A CIRCUIT simplified abstract
- International business machines corporation (20240203985). STACKED VERTICAL-TRANSPORT FIELD EFFECT TRANSISTORS (VTFETs) simplified abstract
- International business machines corporation (20240203993). LOW RESISTANCE METALIZATION FOR CONNECTING A VERTICAL TRANSPORT FET SINGLE-CPP INVERTER simplified abstract
- International business machines corporation (20240203996). HYBRID CELL HEIGHT DESIGN WITH A BACKSIDE POWER DISTRIBUTION NETWORK simplified abstract
- International business machines corporation (20240204067). CONTACT STRUCTURE FOR POWER DELIVERY ON SEMICONDUCTOR DEVICE simplified abstract
- International business machines corporation (20240204100). VERTICAL FIELD EFFECT TRANSISTOR WITH SELF-ALIGNED BACKSIDE TRENCH EPITAXY simplified abstract
- International business machines corporation (20240213244). VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract
- International business machines corporation (20240213252). VTFET CIRCUIT WITH OPTIMIZED MOL simplified abstract
- International business machines corporation (20240215266). RESISTIVE RANDOM ACCESS MEMORY ON A BURIED BITLINE simplified abstract
- International business machines corporation (20240234306). SELF-ALIGNED ZERO TRACK SKIP simplified abstract
- International business machines corporation (20240234415). SEMICONDUCTOR TRANSISTOR ARRAYS simplified abstract
- International business machines corporation (20240234523). SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract
- International business machines corporation (20240242012). HYBRID SIGNAL ROUTING WITH BACKSIDE INTERCONNECT simplified abstract
- International business machines corporation (20240250136). BACKSIDE CONTACT WITH CONTACT JUMPER FOR STACKED FET simplified abstract
- International business machines corporation (20240290713). PASS-THROUGH WIRING IN NOTCHED INTERCONNECT simplified abstract
- International business machines corporation (20240297167). SELF-ALIGNED BACKSIDE INTERCONNECT STRUCTURES simplified abstract
- International business machines corporation (20240304519). FRONTSIDE TO BACKSIDE SIGNAL VIA IN EDGE CELL simplified abstract
- International business machines corporation (20240304626). CROSS COUPLED STACKED TRANSISTORS simplified abstract
- International business machines corporation (20240312912). SELF-ALIGNED VIA IN DOUBLE DIFFUSION BREAK TO CONNECT TO BACKSIDE INTERCONNECTS simplified abstract
- International business machines corporation (20240321748). IRREGULAR-SHAPED POWER RAIL IN CELL POWER DISTRIBUTION simplified abstract
- International business machines corporation (20240321879). STACKED LINEAR DOUBLE-LENGTH VTFETS simplified abstract
- International business machines corporation (20240332293). GATE CONTACTS FOR SEMICONDUCTOR DEVICES simplified abstract
- International business machines corporation (20240339452). AIR POCKET BETWEEN TOP AND BOTTOM SOURCE/DRAIN REGIONS simplified abstract
- International business machines corporation (20240420959). INVERTED GATE CUT REGION
- International business machines corporation (20240420960). INVERTED GATE CUT REGION
- International business machines corporation (20240421038). STACKED DEVICES WITH BACKSIDE CONTACTS
- International business machines corporation (20240421078). REDUCTION OF MIDDLE-OF-LINE RESISTANCE AND CAPACITANCE
- International business machines corporation (20240421079). INTERCONNECT LEVELS WITH MULTIPLE LINE TYPES
- International business machines corporation (20240421087). STRUCTURE FOR BACKSIDE SIGNAL AND POWER
- International business machines corporation (20240421145). CIRCUIT LAYOUTS WITH STAGGERED GATE AND SOURCE/DRAIN REGIONS
- International business machines corporation (20240421156). STACKED TRANSISTOR STRUCTURES WITH HYBRID GATE PITCH
- International business machines corporation (20240421182). LEAKAGE REDUCTION FOR CONTINUOUS ACTIVE DESIGNS
- International business machines corporation (20240429098). MERGED SELF-ALIGNED BACKSIDE CONTACT
- International business machines corporation (20240429226). PROTECTION DIODE FOR STACKED FIELD EFFECT TRANSISTOR
- International business machines corporation (20250089336). DUAL SIDED CIRCUIT CONNECTIONS
Categories:
- Ruilong Xie of Niskayuna NY (US)
- Brent A. Anderson of Jericho VT (US)
- Lawrence A. Clevenger of Saratoga Springs NY (US)
- Junli Wang of Slingerlands NY (US)
- Jay William Strane of Wappingers Falls NY (US)
- Nicholas Anthony Lanzillo of Wynantskill NY (US)
- Reinaldo Vega of Mahopac NY (US)
- Ravikumar Ramachandran of Pleasantville NY (US)
- Jay William Strane of Wappinger Falls NY (US)
- Shay Reboh of Guilderland NY (US)
- Tao Li of Slingerlands NY (US)
- Nicolas Jean Loubet of Guilderland NY (US)
- Takashi Ando of Eastchester NY (US)
- David Wolpert of Poughkeepsie NY (US)
- Albert M. Chu of Nashua NH (US)
- Inventors
- Inventors filing patents with INTERNATIONAL BUSINESS MACHINES CORPORATION
- Inventors filing patents with International Business Machines Corporation