Pages that link to "Category:Tahir Ghani of Portland OR (US)"
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The following pages link to Category:Tahir Ghani of Portland OR (US):
View (previous 50 | next 50) (20 | 50 | 100 | 250 | 500)- Intel corporation (20240105700). SILICON CARBIDE POWER DEVICES INTEGRATED WITH SILICON LOGIC DEVICES simplified abstract (← links)
- Intel corporation (20240105716). INTEGRATED CIRCUIT STRUCTURES HAVING UNIFORM GRID METAL GATE AND TRENCH CONTACT PLUG simplified abstract (← links)
- Intel corporation (20240105771). INTEGRATED CIRCUIT STRUCTURES WITH CHANNEL CAP REDUCTION simplified abstract (← links)
- Intel corporation (20240105811). FERROELECTRIC TUNNEL JUNCTION DEVICES FOR LOW VOLTAGE AND LOW TEMPERATURE OPERATION simplified abstract (← links)
- Intel corporation (20240105854). TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHOD OF FABRICATING THE TRANSISTOR STRUCTURES simplified abstract (← links)
- Intel corporation (20240105860). LOW TEMPERATURE VARACTORS USING VARIABLE CAPACITANCE MATERIALS simplified abstract (← links)
- Intel corporation (20240107749). ARRANGEMENTS FOR MEMORY WITH ONE ACCESS TRANSISTOR FOR MULTIPLE CAPACITORS simplified abstract (← links)
- 17958288. PLUG IN A METAL LAYER simplified abstract (Intel Corporation) (← links)
- 17956775. SPLIT VIA STRUCTURES COUPLED TO CONDUCTIVE LINES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION simplified abstract (Intel Corporation) (← links)
- 17958283. ULTRA-THIN SEMI-METALS FOR LOW TEMPERATURE CONDUCTION simplified abstract (Intel Corporation) (← links)
- 17936952. FORKSHEET TRANSISTOR STRUCTURES WITH GATE CUT SPINE simplified abstract (Intel Corporation) (← links)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation) (← links)
- 17958285. WALL THAT INCLUDES A GAS BETWEEN METAL GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation) (← links)
- 17958291. PLUG BETWEEN TWO GATES OF A SEMICONDUCTOR DEVICE simplified abstract (Intel Corporation) (← links)
- 17956779. INTEGRATED CIRCUIT STRUCTURES HAVING FIN ISOLATION REGIONS RECESSED FOR GATE CONTACT simplified abstract (Intel Corporation) (← links)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation) (← links)
- 18540544. TRANSISTOR WITH ISOLATION BELOW SOURCE AND DRAIN simplified abstract (Intel Corporation) (← links)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation) (← links)
- 17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation) (← links)
- Intel corporation (20240120335). GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (← links)
- 18390952. GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES FABRICATED USING ALTERNATE ETCH SELECTIVE MATERIAL simplified abstract (Intel Corporation) (← links)