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Create the page "H10B10/10" on this wiki! See also the search results found.
- [[Category:H10B10/00]] [[Category:H10B10/10]]5 KB (687 words) - 04:37, 2 February 2024
- ...advanced integrated circuit structures, specifically those with a size of 10 nanometers or smaller. The method described involves forming multiple fins * It specifically focuses on structures with a size of 10 nanometers or smaller.5 KB (691 words) - 05:58, 1 January 2024
- [[Category:H10B10/00]] [[Category:H01L29/10]]2 KB (360 words) - 10:21, 1 December 2023
- * The angle can range between about 10 and 80 degrees with respect to at least one of the edges. ...a die on/in which the transistor resides, e.g., at an angle between about 10 and 80 degrees with respect to at least one of such edges. Implementing at4 KB (544 words) - 06:00, 1 January 2024
- ...plication describes an integrated circuit structure fabrication method for 10 nanometer node and smaller structures, including a fin comprising silicon, ...d of advanced integrated circuit structure fabrication and, in particular, 10 nanometer node and smaller integrated circuit structure fabrication and the4 KB (567 words) - 04:14, 11 April 2024
- [[Category:H10B10/00]] [[Category:H01L29/10]]4 KB (545 words) - 09:58, 30 January 2024
- ...between the concave corner region and the polysilicon structure is at most 10% of the thickness over the polysilicon structure. ...difference between the first thickness and the second thickness is at most 10% of the second thickness.4 KB (611 words) - 08:26, 22 March 2024
- [[Category:H10B10/00]] [[Category:H01L29/10]]4 KB (513 words) - 10:27, 30 January 2024
- [[Category:H01L29/10]] [[Category:H10B10/00]]4 KB (473 words) - 02:53, 16 April 2024
- ...difference between the first thickness and the second thickness is at most 10% of the second thickness. [[Category:H10B10/00]]4 KB (537 words) - 10:12, 21 March 2024
- ...[[:Category:H01L23/00|H01L23/00]] (10), [[:Category:H04W72/23|H04W72/23]] (10), [[:Category:H10B43/27|H10B43/27]] (8) IPC Code(s): B02C25/00, B02C18/00, F26B17/1093 KB (13,664 words) - 08:59, 30 January 2024
- ...ategory:H01L27/092|H01L27/092]] (11), [[:Category:H01L29/775|H01L29/775]] (10), [[:Category:H01L29/423|H01L29/423]] (9), [[:Category:H01L23/00|H01L23/00] IPC Code(s): H01L23/522, H10B10/0054 KB (7,779 words) - 09:11, 12 April 2024
- IPC Code(s): H01L21/768, H01L23/48, H01L25/10 ...ing pattern.[[Category:H01L21/768]][[Category:H01L23/48]][[Category:H01L25/10]][[Category:taiwan semiconductor manufacturing co., ltd.]]53 KB (7,713 words) - 04:09, 26 April 2024
- IPC Code(s): G11C11/412, G11C11/417, H10B10/00 ...e first direction.[[Category:G11C11/412]][[Category:G11C11/417]][[Category:H10B10/00]][[Category:taiwan semiconductor manufacturing company, ltd.]]105 KB (15,276 words) - 04:53, 11 April 2024
- IPC Code(s): G11C7/10, G11C5/06 ...nd shared by the first sram cell and the second sram cell.[[Category:G11C7/10]][[Category:G11C5/06]][[Category:taiwan semiconductor manufacturing co., lt173 KB (25,550 words) - 07:41, 22 March 2024
- ...egory:H01L29/423|H01L29/423]] (11), [[:Category:H01L29/0673|H01L29/0673]] (10) IPC Code(s): B08B3/10, B08B1/00, B24B37/04, B24B37/10, B24B37/30, B24B57/0283 KB (12,114 words) - 04:35, 20 February 2024
- IPC Code(s): H01L23/538, H01L21/48, H01L21/56, H01L23/498, H01L25/10 ...:H01L21/48]][[Category:H01L21/56]][[Category:H01L23/498]][[Category:H01L25/10]][[Category:taiwan semiconductor manufacturing company, ltd.]]65 KB (9,346 words) - 04:20, 26 April 2024
- IPC Code(s): G06F3/06, G11C16/04, G11C16/10, G11C16/26 ...e information.[[Category:G06F3/06]][[Category:G11C16/04]][[Category:G11C16/10]][[Category:G11C16/26]][[Category:kioxia corporation]]109 KB (16,683 words) - 07:41, 22 March 2024
- ...ory:H01L27/092|H01L27/092]] (11), [[:Category:H01L29/66545|H01L29/66545]] (10) IPC Code(s): G11C7/10, H01L27/11, G11C11/419101 KB (14,590 words) - 04:09, 9 February 2024
- IPC Code(s): G06F9/50, G11C7/10 ...the cnm element and the com element.[[Category:G06F9/50]][[Category:G11C7/10]][[Category:intel corporation]]64 KB (9,638 words) - 04:09, 9 February 2024