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Category:Yu-Ming Lin of Hsinchu City (TW)
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Pages in category "Yu-Ming Lin of Hsinchu City (TW)"
The following 28 pages are in this category, out of 28 total.
1
- 17667873. SEMICONDUCTOR MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886472. FERROELECTRIC MEMORY DEVICE AND METHOD OF FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17898733. MEMORY DEVICE AND METHOD FOR OPERATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18047412. Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the Same simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18149312. THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18151483. MEMORY ARRAY AND OPERATION METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152157. SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18155688. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18364616. EMBEDDED FERROELECTRIC FINFET MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18492964. MEMORY WITH FRAM AND SRAM OF IC simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18501137. THREE-DIMENSIONAL MEMORY DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18511102. ENLARGING CONTACT AREA AND PROCESS WINDOW FOR A CONTACT VIA simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18516908. INTEGRATED CIRCUIT INCLUDING THREE-DIMENSIONAL MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18520996. Source/Drain Metal Contact and Formation Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18521913. FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
T
- Taiwan semiconductor manufacturing co., ltd. (20240096961). Source/Drain Metal Contact and Formation Thereof simplified abstract
- Taiwan semiconductor manufacturing co., ltd. (20240128378). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240107776). ANTIFERROELECTRIC NON-VOLATILE MEMORY simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113221). FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113222). THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240113225). SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF simplified abstract
U
- US Patent Application 18230864. TRANSISTOR INCLUDING HYDROGEN DIFFUSION BARRIER FILM AND METHODS OF FORMING SAME simplified abstract
- US Patent Application 18360895. Backside Power Rail And Methods Of Forming The Same simplified abstract
- US Patent Application 18362192. MEMORY CHIPLET HAVING MULTIPLE ARRAYS OF MEMORY DEVICES AND METHODS OF FORMING THE SAME simplified abstract
- US Patent Application 18363217. FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME simplified abstract
- US Patent Application 18365315. Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof simplified abstract
- US Patent Application 18446541. SELF-ALIGNED ACTIVE REGIONS AND PASSIVATION LAYER AND METHODS OF MAKING THE SAME simplified abstract
- US Patent Application 18447084. IMPROVED CONTACT RESISTANCE BETWEEN VIA AND CONDUCTIVE LINE simplified abstract