US Patent Application 18365315. Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof simplified abstract

Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Huan-Chieh Su of Tianzhong Township (TW)

Chih-Hao Wang of Baoshan Township (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Wei-Hao Wu of Hsinchu City (TW)

Zhi-Chang Lin of Zhubei City (TW)

Jia-Ni Yu of New Taipei City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chung-Wei Hsu of Hsinchu County (TW)

Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18365315 titled 'Liner for A Bi-Layer Gate Helmet and the Fabrication Thereof

Simplified Explanation

The patent application describes a semiconductor device with a unique structure and composition. Here are the key points:

• The device includes a semiconductor layer.
• A gate structure is placed on top of the semiconductor layer.
• A spacer is positioned on the side of the gate structure.
• The spacer is taller than the gate structure.
• A liner is applied to both the gate structure and the spacer.
• The spacer and the liner are made of different materials.

Overall, this patent application introduces a novel design for a semiconductor device, utilizing a taller spacer and different material compositions for the spacer and liner.

Original Abstract Submitted

A semiconductor device includes a semiconductor layer. A gate structure is disposed over the semiconductor layer. A spacer is disposed on a sidewall of the gate structure. A height of the spacer is greater than a height of the gate structure. A liner is disposed on the gate structure and on the spacer. The spacer and the liner have different material compositions.