18149312. THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Yan-Yi Chen of Taipei City (TW)

Wu-Wei Tsai of Taoyuan City (TW)

Yu-Ming Hsiang of New Taipei City (TW)

Hai-Ching Chen of Hsinchu City (TW)

Yu-Ming Lin of Hsinchu City (TW)

Chung-Te Lin of Tainan City (TW)

THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149312 titled 'THRESHOLD VOLTAGE MODULATION FOR THIN FILM TRANSISTORS

Simplified Explanation

The patent application describes a thin film transistor with a gate electrode structure that has a different work function than the active layer and insulator.

  • The thin film transistor comprises an active layer over a substrate.
  • An insulator is stacked with the active layer.
  • A gate electrode structure is stacked with the insulator and includes a gate material layer with a first work function and a first interfacial layer.
  • The first interfacial layer is directly between the insulator and the gate material layer.
  • The gate electrode structure has a second work function that is different from the first work function.

Potential Applications

This technology could be applied in:

  • Display panels
  • Touchscreen devices
  • Electronic circuits

Problems Solved

This technology helps in:

  • Improving the performance of thin film transistors
  • Enhancing the efficiency of electronic devices

Benefits

The benefits of this technology include:

  • Better control over the transistor operation
  • Increased reliability and stability of electronic devices

Potential Commercial Applications

This technology could be commercially applied in:

  • Consumer electronics
  • Medical devices
  • Automotive displays

Possible Prior Art

One possible prior art for this technology could be the use of different work functions in gate electrode structures in thin film transistors to improve device performance.

Unanswered Questions

How does this technology compare to existing thin film transistor designs?

This article does not provide a direct comparison with existing thin film transistor designs to showcase the advantages of the proposed technology.

What specific electronic devices could benefit the most from this technology?

The article does not specify which electronic devices could see the most significant improvements from implementing this technology.


Original Abstract Submitted

Some embodiments relate to a thin film transistor comprising an active layer over a substrate. An insulator is stacked with the active layer. A gate electrode structure is stacked with the insulator and includes a gate material layer having a first work function and a first interfacial layer. The first interfacial layer is directly between the insulator and the gate material layer, wherein the gate electrode structure has a second work function that is different from the first work function.

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