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Category:H10D30/69
Subcategories
This category has the following 35 subcategories, out of 35 total.
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M
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Pages in category "H10D30/69"
The following 35 pages are in this category, out of 35 total.
1
- 18984950. MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985584. Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material (MICRON TECHNOLOGY, INC.)
- 18991796. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (Samsung Electronics Co., Ltd.)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 18999945. ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES (Intel Corporation)
- 19001219. RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER (Intel Corporation)
- 19003011. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES (Samsung Electronics Co., Ltd.)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19008393. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19018287. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018707. MEMORY DEVICE HAVING MEMORY CELL STRINGS AND SEPARATE READ AND WRITE CONTROL GATES (Micron Technology, Inc.)
- 19018780. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS (Intel Corporation)
I
- Intel corporation (20250125260). ADVANCED LITHOGRAPHY AND SELF-ASSEMBLED DEVICES
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250133822). RIBBON OR WIRE TRANSISTOR STACK WITH SELECTIVE DIPOLE THRESHOLD VOLTAGE SHIFTER
- Intel corporation (20250142939). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250151318). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH VERTICAL SIDEWALLS
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on April 24th, 2025
- Intel Corporation patent applications on May 1st, 2025
- Intel Corporation patent applications on May 8th, 2025
M
- Micron technology, inc. (20250118493). Ferroelectric Capacitor, Ferroelectric Field Effect Transistor, and Method Used in Forming an Electronic Device Comprising Conductive Material and Ferroelectric Material
- Micron technology, inc. (20250151275). MEMORY DEVICE HAVING MEMORY CELL STRINGS AND SEPARATE READ AND WRITE CONTROL GATES
- MICRON TECHNOLOGY, INC. patent applications on April 10th, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
S
- Samsung electronics co., ltd. (20250126882). SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Samsung electronics co., ltd. (20250133739). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES
- Samsung Electronics Co., Ltd. patent applications on April 17th, 2025
- Samsung Electronics Co., Ltd. patent applications on April 24th, 2025
T
- Taiwan semiconductor manufacturing co., ltd. (20250120171). MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20250142954). SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH
- Taiwan semiconductor manufacturing company, ltd. (20250151307). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025