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Category:H10B53/20
Subcategories
This category has the following 23 subcategories, out of 23 total.
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Pages in category "H10B53/20"
The following 98 pages are in this category, out of 98 total.
1
- 18088552. INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract (Intel Corporation)
- 18203877. TECHNIQUES TO MANUFACTURE FERROELECTRIC MEMORY DEVICES simplified abstract (Micron Technology, Inc.)
- 18204773. FORMATION FOR MEMORY CELLS simplified abstract (Micron Technology, Inc.)
- 18216490. SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCESS TRANSISTOR AND STACKED 3D CAPACITORS (Intel Corporation)
- 18340407. 3D FERROELECTRIC MEMORY DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340560. THREE-DIMENSIONAL FERROELECTRIC MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18396258. ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18417830. THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract (Micron Technology, Inc.)
- 18436574. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME (SAMSUNG ELECTRONICS CO., LTD.)
- 18510464. MEMORY STRUCTURES WITH VOIDS simplified abstract (Micron Technology, Inc.)
- 18511461. FERROELECTRIC MEMORY CELL simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18522637. Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract (Micron Technology, Inc.)
- 18531922. ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18586255. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18588621. MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18589281. FERROELECTRIC MEMORY AND FORMING METHOD THEREOF, AND ELECTRONIC DEVICE simplified abstract (HUAWEI TECHNOLOGIES CO., LTD.)
- 18590282. FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18594350. THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18608149. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18630647. SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF (Samsung Electronics Co., Ltd.)
- 18657970. SEMICONDUCTOR MEMORY DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
- 18666498. Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract (Micron Technology, Inc.)
- 18811335. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18941445. Memory Device and Method of Forming Thereof (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18947139. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME (Taiwan Semiconductor Manufacturing Company, LTD.)
- 18966496. Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, and Methods of Forming a Device Comprising Elevationally-Extending Transistors (Micron Technology, Inc.)
- 19011268. Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array (Micron Technology, Inc.)
- 19012445. THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER (Samsung Electronics Co., Ltd.)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
H
I
- Intel corporation (20240215256). INTEGRATED CIRCUIT STRUCTURES HAVING BACKSIDE CAPACITORS simplified abstract
- Intel corporation (20250008740). SELF-ALIGNED MEMORY CELL WITH REPLACEMENT METAL GATE VERTICAL ACCESS TRANSISTOR AND STACKED 3D CAPACITORS
- Intel Corporation patent applications on January 2nd, 2025
- Intel Corporation patent applications on June 27th, 2024
K
M
- Micron technology, inc. (20240164113). MEMORY STRUCTURES WITH VOIDS simplified abstract
- Micron technology, inc. (20240164114). Vertical Transistor, Integrated Circuitry, Method Of Forming A Vertical Transistor, And Method Of Forming Integrated Circuitry simplified abstract
- Micron technology, inc. (20240237364). THIN FILM TRANSISTORS AND RELATED FABRICATION TECHNIQUES simplified abstract
- Micron technology, inc. (20240292632). CROSS-POINT MEMORY ARRAY WITH ACCESS LINES simplified abstract
- Micron technology, inc. (20240306399). Integrated Components Which Have Both Horizontally-Oriented Transistors and Vertically-Oriented Transistors simplified abstract
- Micron technology, inc. (20250098228). Elevationally-Extending Transistors, Devices Comprising Elevationally-Extending Transistors, and Methods of Forming a Device Comprising Elevationally-Extending Transistors
- Micron technology, inc. (20250140298). Memory Arrays Comprising Vertically-Alternating Tiers of Insulative Material and Memory Cells and Methods of Forming a Memory Array
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on February 6th, 2025
- Micron Technology, Inc. patent applications on January 23rd, 2025
- Micron Technology, Inc. patent applications on January 30th, 2025
- Micron Technology, Inc. patent applications on July 11th, 2024
- Micron Technology, Inc. patent applications on March 20th, 2025
- Micron Technology, Inc. patent applications on May 16th, 2024
- Micron Technology, Inc. patent applications on May 1st, 2025
- Micron Technology, Inc. patent applications on May 8th, 2025
- Micron Technology, Inc. patent applications on September 12th, 2024
- Micron Technology, Inc. patent applications on September 5th, 2024
S
- Samsung electronics co., ltd. (20240196623). ELECTRONIC DEVICE INCLUDING FERROELECTRIC THIN FILM, METHOD OF MANUFACTURING THE ELECTRONIC DEVICE, AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240206188). FERROELECTRIC CAPACITORS, TRANSISTORS, MEMORY DEVICES, AND METHODS OF MANUFACTURING FERROELECTRIC DEVICES simplified abstract
- Samsung electronics co., ltd. (20240213349). ELECTRONIC DEVICE INCLUDING FERROELECTRIC MATERIAL AND ELECTRONIC APPARATUS INCLUDING THE ELECTRONIC DEVICE simplified abstract
- Samsung electronics co., ltd. (20240250180). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER simplified abstract
- Samsung electronics co., ltd. (20240260274). MEMORY DEVICE IMPLEMENTING MULTI-BIT AND MEMORY APPARATUS INCLUDING THE SAME
- Samsung electronics co., ltd. (20240260274). MEMORY DEVICE IMPLEMENTING MULTI-BIT AND MEMORY APPARATUS INCLUDING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240306398). THREE DIMENSIONAL NON-VOLATILE MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240324237). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Samsung electronics co., ltd. (20240357831). SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract
- Samsung electronics co., ltd. (20240414925). SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250017021). SEMICONDUCTOR MEMORY DEVICES AND MANUFACTURING METHODS THEREOF
- Samsung electronics co., ltd. (20250024687). 3-DIMENSIONAL (3D) FERROELECTRIC RANDOM ACCESS MEMORY (FeRAM) AND METHOD OF MANUFACTURING THE SAME
- Samsung electronics co., ltd. (20250107099). SEMICONDUCTOR MEMORY DEVICE
- Samsung electronics co., ltd. (20250151331). THIN FILM TRANSISTOR AND VERTICAL NON-VOLATILE MEMORY DEVICE INCLUDING TRANSITION METAL-INDUCED POLYCRYSTALLINE METAL OXIDE CHANNEL LAYER
- Samsung Electronics Co., Ltd. patent applications on August 1st, 2024
- Samsung Electronics Co., Ltd. patent applications on December 12th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on December 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on January 16th, 2025
- Samsung Electronics Co., Ltd. patent applications on January 9th, 2025
- Samsung Electronics Co., Ltd. patent applications on July 25th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on July 25th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 20th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 20th, 2024
- Samsung Electronics Co., Ltd. patent applications on June 27th, 2024
- Samsung Electronics Co., Ltd. patent applications on March 27th, 2025
- SAMSUNG ELECTRONICS CO., LTD. patent applications on March 27th, 2025
- Samsung Electronics Co., Ltd. patent applications on May 8th, 2025
- Samsung Electronics Co., Ltd. patent applications on October 24th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 12th, 2024
- Samsung Electronics Co., Ltd. patent applications on September 26th, 2024
T
- Taiwan semiconductor manufacturing company, ltd. (20240381652). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20240381665). SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract
- Taiwan semiconductor manufacturing company, ltd. (20250063736). THREE-DIMENSIONAL MEMORY DEVICES WITH CONDUCTIVE SPACERS
- Taiwan semiconductor manufacturing company, ltd. (20250072002). Memory Device and Method of Forming Thereof
- Taiwan semiconductor manufacturing company, ltd. (20250072004). THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
- TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. patent applications on February 20th, 2025
- Taiwan Semiconductor Manufacturing Company, LTD. patent applications on February 27th, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on March 14th, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on November 14th, 2024