Samsung electronics co., ltd. (20250107099). SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

Organization Name

samsung electronics co., ltd.

Inventor(s)

Hyeran Lee of Suwon-si KR

SEMICONDUCTOR MEMORY DEVICE

This abstract first appeared for US patent application 20250107099 titled 'SEMICONDUCTOR MEMORY DEVICE

Original Abstract Submitted

a semiconductor device includes a first substrate and first and second memory blocks on the first substrate and spaced apart in a first direction, the first memory block includes first bit lines spaced apart in a second direction, first semiconductor patterns in contact with side surfaces of the first bit lines and extending in a direction, and first capacitors electrically connected to ends of the first semiconductor patterns, the second memory block includes second bit lines spaced apart in the second direction, second semiconductor patterns in contact with side surfaces of the second bit lines and extending in the first direction, and second capacitors electrically connected to ends of the second semiconductor patterns. the first capacitors respectively include a first dielectric layer of one of silicon oxide or metal oxide, and the second capacitors respectively include a second dielectric layer of one of ferroelectric or antiferroelectric materials.