18811335. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
SEMICONDUCTOR MEMORY DEVICE
Organization Name
Inventor(s)
Takafumi Masuda of Kawasaki Kanagawa (JP)
Mutsumi Okajima of Yokkaichi Mie (JP)
Nobuyoshi Saito of Ota Tokyo (JP)
Keiji Ikeda of Kawasaki Kanagawa (JP)
SEMICONDUCTOR MEMORY DEVICE
This abstract first appeared for US patent application 18811335 titled 'SEMICONDUCTOR MEMORY DEVICE
Original Abstract Submitted
A semiconductor memory device includes a substrate, first semiconductor layers stacked in a first direction intersecting the substrate, a first via wiring extending in the direction and connected to the layers, memory units stacked in the direction and connected to the layers, first gate electrodes stacked in the direction and facing the layers, first wirings stacked in the direction, extending in a second direction intersecting the first direction, and connected to the first electrodes, second semiconductor layers stacked in the first direction and connected to the first electrodes via the first wirings, a second via wiring extending in the first direction and connected to the second layers, and second gate electrodes stacked in the first direction and facing the second layers. The second layers include a different material from the first layers, or a composition ratio of materials of the second layers is different from that of the first layers.