Search results
Jump to navigation
Jump to search
Create the page "H01L21/50" on this wiki! See also the search results found.
- - Next, a second layer is deposited which contains over 50 atomic percent of silicon. ...er having an organic composition; depositing a second layer including over 50 atomic percent of silicon; and depositing a photosensitive layer on the sec2 KB (307 words) - 15:24, 6 December 2023
- IPC Code(s): G06F12/02, G06F9/50 [[Category:G06F12/02]][[Category:G06F9/50]][[Category:micron technology, inc.]]14 KB (2,007 words) - 09:01, 30 January 2024
- [[Category:H01L21/78]] [[Category:H01L21/50]]3 KB (456 words) - 06:02, 2 January 2024
- [[Category:H01L21/56]] [[Category:H01L21/50]]4 KB (559 words) - 06:04, 11 December 2023
- * Thickness of metal oxide layered structure is at least 50 Å ...ally 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal ox5 KB (672 words) - 08:19, 22 March 2024
- [[Category:H01L21/02]] [[Category:H01L21/311]]4 KB (570 words) - 06:04, 12 January 2024
- [[Category:H01L21/50]] [[Category:H01L21/48]]3 KB (445 words) - 08:36, 6 December 2023
- [[Category:H01L21/50]] [[Category:H01L21/768]]3 KB (436 words) - 06:06, 11 December 2023
- ...meets target critical dimensions and has an aspect ratio of approximately 50:1. ...meets target critical dimensions and has an aspect ratio of approximately 50:1.4 KB (509 words) - 08:28, 22 March 2024
- IPC Code(s): B60Q1/50, B60Q1/26 [[Category:B60Q1/50]][[Category:B60Q1/26]][[Category:SMARTREND MANUFACTURING GROUP (SMG), INC.]7 KB (913 words) - 10:04, 30 January 2024
- ...ing material is a polymer compound with a light transmittance of less than 50%, suitable for laser sintering to form the mark. * Polymer compound marking material with light transmittance less than 50%.4 KB (558 words) - 08:07, 31 May 2024
- ...ally 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. the second dielectric layer is a photo-sensitive material. the metal ox [[Category:H01L21/321]]4 KB (525 words) - 10:06, 21 March 2024
- [[Category:H01L21/822]] [[Category:H01L23/50]]3 KB (494 words) - 15:29, 6 December 2023
- [[Category:H01L21/50]]2 KB (268 words) - 10:10, 1 December 2023
- ...greater than 130 degrees relative to the wafer's top surface and less than 50 degrees relative to the focus ring's lower surface. ...tive to the top surface of the wafer and/or may be less than approximately 50 degrees relative to an adjacent lower surface of the focus ring to reduce a3 KB (504 words) - 15:19, 30 November 2023
- IPC Code(s): G06F9/50, G06F9/48 [[Category:G06F9/50]][[Category:G06F9/48]][[Category:international business machines corporatio21 KB (2,593 words) - 09:01, 30 January 2024
- [[Category:H01L21/18]] [[Category:H01L21/768]]4 KB (525 words) - 10:43, 21 March 2024
- [[Category:H01L21/18]] [[Category:H01L21/768]]4 KB (507 words) - 09:07, 22 March 2024
- ...ons, while the second interconnects have a thickness between 5 microns and 50 microns. ...cond interconnects include solder having a thickness between 5 microns and 50 microns.5 KB (720 words) - 03:36, 25 March 2024
- ...meets target critical dimensions and has an aspect ratio of approximately 50:1. ...meets target critical dimensions and has an aspect ratio of approximately 50:1.4 KB (569 words) - 10:13, 21 March 2024