18297282. TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does this technology compare to traditional capacitor structures in terms of performance and efficiency?
- 1.11 What are the potential challenges or limitations of implementing this deep trench capacitor structure in practical semiconductor devices?
- 1.12 Original Abstract Submitted
TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ming-Hsun Lin of Hsinchu City (TW)
Lee-Chuan Tseng of New Taipei City (TW)
TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18297282 titled 'TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
Simplified Explanation
Some implementations described herein include a deep trench capacitor structure and methods of formation. The deep trench capacitor structure may penetrate vertically into a silicon substrate. In some implementations, formation of the deep trench capacitor structure includes forming segments of a deep trench capacitor recess using a combination of in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques. By forming the deep trench capacitor recess using the in-situ oxidation/nitridation operation, the ex-situ deposition, and the reactive ion etching techniques, a deep trench capacitor structure may be formed that meets target critical dimensions and has an aspect ratio of approximately 50:1.
- Deep trench capacitor structure formed by penetrating vertically into a silicon substrate.
- Formation process involves in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques.
- Resulting structure meets target critical dimensions and has an aspect ratio of approximately 50:1.
Potential Applications
The technology can be applied in:
- Semiconductor manufacturing
- Memory devices
- Power electronics
Problems Solved
- Achieving target critical dimensions in deep trench capacitor structures
- Maintaining high aspect ratios during formation process
Benefits
- Improved performance of semiconductor devices
- Enhanced memory capabilities
- Increased efficiency in power electronics
Potential Commercial Applications
Optimizing Deep Trench Capacitor Structures for Semiconductor Devices
Possible Prior Art
Prior art related to deep trench capacitor structures and formation techniques in semiconductor manufacturing.
Unanswered Questions
How does this technology compare to traditional capacitor structures in terms of performance and efficiency?
The article does not provide a direct comparison between this technology and traditional capacitor structures.
What are the potential challenges or limitations of implementing this deep trench capacitor structure in practical semiconductor devices?
The article does not address potential challenges or limitations that may arise when implementing this technology in practical applications.
Original Abstract Submitted
Some implementations described herein include a deep trench capacitor structure and methods of formation. The deep trench capacitor structure may penetrate vertically into a silicon substrate. In some implementations, formation of the deep trench capacitor structure includes forming segments of a deep trench capacitor recess using a combination of in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques. By forming the deep trench capacitor recess using the in-situ oxidation/nitridation operation, the ex-situ deposition, and the reactive ion etching techniques, a deep trench capacitor structure may be formed that meets target critical dimensions and has an aspect ratio of approximately 50:1.
