US Patent Application 18447409. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE simplified abstract

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Wei-Yu Chen of Taipei (TW)

Hao-Jan Pei of Hsinchu (TW)

Hsuan-Ting Kuo of Taichung (TW)

Chih-Chiang Tsao of Taoyuan (TW)

Jen-Jui Yu of Taipei (TW)

Philip Yu-Shuan Chung of Taipei (TW)

Chia-Lun Chang of Tainan (TW)

Hsiu-Jen Lin of Zhubei (TW)

Ching-Hua Hsieh of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18447409 titled 'SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE

Simplified Explanation

The patent application describes a method for forming solder connections in electronic devices.

• The method involves applying solder paste to certain areas of a redistribution structure, which has a lower melting temperature.
• Solder bumps, with a higher melting temperature, are then formed on an interconnect structure.
• The solder bumps are placed on the regions of solder paste.
• A first reflow process is performed at a lower temperature, causing the solder paste to melt and form connections.
• After the first reflow process, a second reflow process is performed at a higher temperature to further strengthen the connections.

Original Abstract Submitted

A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature.