18523457. METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jing-Cheng Lin of Hsinchu (TW)

Cheng-Lin Huang of Hsinchu (TW)

METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18523457 titled 'METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME

Simplified Explanation

The abstract describes a patent application for a structure that includes an integrated circuit die encapsulated by an encapsulant, with a redistribution structure on the die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die and includes specific layers and materials to enhance its performance.

• Integrated circuit die encapsulated by an encapsulant
• Redistribution structure on the die and encapsulant
• Includes a first dielectric layer, metallization pattern, metal oxide layered structure, and second dielectric layer
• Metal oxide layer has a 1:1 ratio of metal atoms to oxygen atoms
• Thickness of metal oxide layered structure is at least 50 Å
• Second dielectric layer is a photo-sensitive material

Potential Applications

The technology described in this patent application could be applied in the manufacturing of advanced integrated circuits, microprocessors, and other electronic devices that require high-performance redistribution structures.

Problems Solved

This technology solves the problem of improving the electrical performance and reliability of integrated circuits by utilizing a specific metal oxide layered structure in the redistribution layer.

Benefits

The benefits of this technology include enhanced electrical connectivity, improved signal integrity, and increased overall performance of integrated circuits and electronic devices.

Potential Commercial Applications

The technology has potential commercial applications in the semiconductor industry for the production of high-performance integrated circuits and electronic components. A SEO optimized title for this section could be "Commercial Applications of Metal Oxide Layered Structure in Integrated Circuits".

Possible Prior Art

One possible prior art for this technology could be the use of traditional redistribution structures in integrated circuits, which may not have the same level of performance and reliability as the metal oxide layered structure described in this patent application.

How does the metal oxide layered structure impact the overall reliability of the integrated circuit?

The metal oxide layered structure is designed to enhance the electrical performance of the redistribution structure, but its specific impact on the reliability of the integrated circuit is not explicitly mentioned in the abstract. Further research or testing may be needed to determine the reliability benefits of this technology.

What are the potential cost implications of implementing this technology in the manufacturing process of integrated circuits?

While the abstract highlights the performance benefits of the metal oxide layered structure, it does not address the potential cost implications of incorporating this technology into the production of integrated circuits. Understanding the cost-effectiveness of this innovation is crucial for its adoption in commercial applications.

Original Abstract Submitted

Some embodiment structures and methods are described. A structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. The redistribution structure is electrically coupled to the integrated circuit die. The redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. The metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. The second dielectric layer is a photo-sensitive material. The metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.