17932624. MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES simplified abstract (Intel Corporation)
Contents
- 1 MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES
Organization Name
Inventor(s)
Hiroki Tanaka of Gilbert AZ (US)
Robert Alan May of Chandler AZ (US)
Onur Ozkan of Scottsdale AZ (US)
Rahul N. Manepalli of Chandler AZ (US)
Ravindranath Vithal Mahajan of Chandler AZ (US)
Hamid Azimi of Paradise Valley AZ (US)
MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES - A simplified explanation of the abstract
This abstract first appeared for US patent application 17932624 titled 'MICROELECTRONIC ASSEMBLIES WITH MIXED COPPER AND SOLDER INTERCONNECTS HAVING DIFFERENT THICKNESSES
Simplified Explanation
The patent application describes a microelectronic assembly with different thicknesses of conductive contacts and interconnects for connecting microelectronic components.
- The microelectronic assembly includes a substrate with first and second conductive contacts of different thicknesses, a first microelectronic component with third conductive contacts connected to the first conductive contacts by solder interconnects, and a second microelectronic component with fourth conductive contacts connected to the second conductive contacts by solder interconnects.
- The first interconnects have a thickness between 2 microns and 35 microns, while the second interconnects have a thickness between 5 microns and 50 microns.
Potential Applications
This technology could be applied in the manufacturing of various electronic devices such as smartphones, tablets, laptops, and other consumer electronics.
Problems Solved
This technology solves the problem of efficiently connecting microelectronic components with different thicknesses of conductive contacts using solder interconnects.
Benefits
The benefits of this technology include improved reliability, performance, and manufacturability of microelectronic assemblies.
Potential Commercial Applications
Potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions.
Possible Prior Art
One possible prior art could be the use of different thicknesses of conductive contacts and interconnects in microelectronic assemblies to optimize performance and reliability.
Unanswered Questions
== How does this technology compare to existing methods of connecting microelectronic components with different thicknesses of conductive contacts? This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this technology over current practices.
== What are the specific challenges in manufacturing microelectronic assemblies with varying thicknesses of conductive contacts and interconnects? The article does not delve into the specific challenges faced in manufacturing such assemblies, leaving the reader curious about the potential hurdles and solutions in this process.
Original Abstract Submitted
Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a substrate having a surface including first conductive contacts and second conductive contacts, wherein the first conductive contacts have a first thickness and the second conductive contacts have a second thickness different than the first thickness; a first microelectronic component having third conductive contacts, wherein respective ones of the third conductive contacts are coupled to respective ones of the first conductive contacts by first interconnects, wherein the first interconnects include solder having a thickness between 2 microns and 35 microns; and a second microelectronic component having fourth conductive contact, wherein respective ones of the fourth conductive contacts are coupled to respective ones of the second conductive contacts by second interconnects, wherein the second interconnects include solder having a thickness between 5 microns and 50 microns.
- Intel Corporation
- Hiroki Tanaka of Gilbert AZ (US)
- Robert Alan May of Chandler AZ (US)
- Onur Ozkan of Scottsdale AZ (US)
- Ali Lehaf of Chandler AZ (US)
- Steve Cho of Chandler AZ (US)
- Gang Duan of Chandler AZ (US)
- Jieping Zhang of Mesa AZ (US)
- Rahul N. Manepalli of Chandler AZ (US)
- Ravindranath Vithal Mahajan of Chandler AZ (US)
- Hamid Azimi of Paradise Valley AZ (US)
- H01L23/538
- H01L21/48
- H01L23/00
- H01L23/31
- H01L25/00
- H01L25/065