Taiwan semiconductor manufacturing co., ltd. (20240096642). METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract
Contents
- 1 METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Jing-Cheng Lin of Hsinchu (TW)
Cheng-Lin Huang of Hsinchu (TW)
METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096642 titled 'METAL OXIDE LAYERED STRUCTURE AND METHODS OF FORMING THE SAME
Simplified Explanation
The patent application describes a structure with an integrated circuit die encapsulated by an encapsulant and a redistribution structure on the die and encapsulant. The redistribution structure includes layers of dielectric material, metallization pattern, metal oxide layered structure, and a photosensitive dielectric layer.
- Integrated circuit die encapsulated by an encapsulant
- Redistribution structure on the die and encapsulant
- Layers of dielectric material, metallization pattern, metal oxide layered structure, and photosensitive dielectric layer
Potential Applications
This technology could be applied in the fields of semiconductor manufacturing, electronics, and integrated circuit design.
Problems Solved
This technology solves the problem of improving the electrical coupling and reliability of integrated circuit structures.
Benefits
The benefits of this technology include enhanced electrical performance, improved reliability, and potentially reduced manufacturing costs.
Potential Commercial Applications
The potential commercial applications of this technology could be in the production of advanced integrated circuits for various electronic devices.
Possible Prior Art
One possible prior art could be the use of metal oxide layers in semiconductor devices for improving electrical properties.
Unanswered Questions
How does this technology compare to existing methods in terms of cost-effectiveness?
This article does not provide information on the cost-effectiveness of this technology compared to existing methods. Further research and analysis would be needed to determine this aspect.
What are the environmental implications of using metal oxide layered structures in semiconductor devices?
The article does not address the environmental implications of using metal oxide layered structures in semiconductor devices. This could be an important consideration for the sustainability of the technology.
Original Abstract Submitted
some embodiment structures and methods are described. a structure includes an integrated circuit die at least laterally encapsulated by an encapsulant, and a redistribution structure on the integrated circuit die and encapsulant. the redistribution structure is electrically coupled to the integrated circuit die. the redistribution structure includes a first dielectric layer on at least the encapsulant, a metallization pattern on the first dielectric layer, a metal oxide layered structure on the metallization pattern, and a second dielectric layer on the first dielectric layer and the metallization pattern. the metal oxide layered structure includes a metal oxide layer having a ratio of metal atoms to oxygen atoms that is substantially 1:1, and a thickness of the metal oxide layered structure is at least 50 Å. the second dielectric layer is a photo-sensitive material. the metal oxide layered structure is disposed between the metallization pattern and the second dielectric layer.
