Taiwan semiconductor manufacturing co., ltd. (20240096930). TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING simplified abstract
Contents
- 1 TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
Organization Name
taiwan semiconductor manufacturing co., ltd.
Inventor(s)
Ming-Hsun Lin of Hsinchu City (TW)
Lee-Chuan Tseng of New Taipei City (TW)
TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING - A simplified explanation of the abstract
This abstract first appeared for US patent application 20240096930 titled 'TRENCH CAPACITOR STRUCTURE AND METHODS OF MANUFACTURING
Simplified Explanation
The abstract describes a patent application related to a deep trench capacitor structure and methods of formation. The structure penetrates vertically into a silicon substrate and is formed using a combination of in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques to meet specific dimensions and aspect ratios.
- The deep trench capacitor structure penetrates vertically into a silicon substrate.
- Formation involves in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques.
- The structure meets target critical dimensions and has an aspect ratio of approximately 50:1.
Potential Applications
The technology described in the patent application could be applied in the semiconductor industry for the development of high-performance memory devices, such as DRAMs and other integrated circuits requiring deep trench capacitor structures.
Problems Solved
This technology solves the problem of achieving precise critical dimensions and aspect ratios in deep trench capacitor structures, which are essential for the performance and reliability of semiconductor devices.
Benefits
The benefits of this technology include improved performance and reliability of semiconductor devices, increased efficiency in manufacturing processes, and the potential for developing advanced memory technologies.
Potential Commercial Applications
The potential commercial applications of this technology include the production of high-density memory devices, advanced integrated circuits, and other semiconductor products requiring deep trench capacitor structures.
Possible Prior Art
One possible prior art in this field could be the use of different techniques for forming deep trench capacitor structures in semiconductor devices, such as variations in oxidation, nitridation, deposition, and etching processes.
Unanswered Questions
How does this technology compare to existing methods for forming deep trench capacitor structures?
This article does not provide a direct comparison with existing methods or technologies in the field. It would be helpful to understand the specific advantages or improvements offered by this new approach.
What are the potential challenges or limitations of implementing this technology in semiconductor manufacturing processes?
The article does not address any potential challenges or limitations that may arise when implementing this technology. It would be valuable to explore any constraints or difficulties that could affect its practical application in the industry.
Original Abstract Submitted
some implementations described herein include a deep trench capacitor structure and methods of formation. the deep trench capacitor structure may penetrate vertically into a silicon substrate. in some implementations, formation of the deep trench capacitor structure includes forming segments of a deep trench capacitor recess using a combination of in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques. by forming the deep trench capacitor recess using the in-situ oxidation/nitridation operation, the ex-situ deposition, and the reactive ion etching techniques, a deep trench capacitor structure may be formed that meets target critical dimensions and has an aspect ratio of approximately 50:1.
