There is currently no text in this page. You can search for this page title in other pages, or search the related logs, but you do not have permission to create this page.
Category:H10D62/13
Subcategories
This category has the following 55 subcategories, out of 55 total.
C
D
F
H
I
J
K
M
N
P
R
S
T
V
W
Y
Z
Pages in category "H10D62/13"
The following 53 pages are in this category, out of 53 total.
1
- 18982711. BIPOLAR JUNCTION TRANSISTOR (BJT) AND FABRICATING METHOD THEREOF (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18983288. SEMICONDUCTOR DEVICE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18984950. MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18985094. SEMICONDUCTOR BIOSENSOR (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
- 18991798. SEMICONDUCTOR STRUCTURE HAVING FUSE BELOW GATE STRUCTURE AND METHOD OF MANUFACTURING THEREOF (NANYA TECHNOLOGY CORPORATION)
- 18991919. Semiconductor Structure Cutting Process and Structures Formed Thereby (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999183. FINFET Device and Method of Forming Same (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18999778. SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES (Intel Corporation)
- 18999923. EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19002519. METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19002850. INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19007076. SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19008393. DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION (Intel Corporation)
- 19011071. Gate Spacers in Semiconductor Devices (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19012094. CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CONTACT RESISTANCE (Intel Corporation)
- 19012506. INTEGRATED CIRCUIT WITH CONTINUOUS ACTIVE REGION AND RAISED SOURCE/DRAIN REGION (Samsung Electronics Co., Ltd.)
- 19014248. SEMICONDUCTOR DEVICE AND FABRICATION METHOD OF SEMICONDUCTOR DEVICE HAVING IMPROVED BREAKING WITHSTAND CAPABILITY (FUJI ELECTRIC CO., LTD.)
- 19018073. Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor (Micron Technology, Inc.)
- 19018287. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018568. SEMICONDUCTOR DEVICE STRUCTURE (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19018623. MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 19019016. SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO INTERCONNECT STRUCTURES (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 19019071. SEMICONDUCTOR DEVICE AND METHOD OF FORMING MICRO INTERCONNECT STRUCTURES (SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC)
- 19019115. Body Tie Optimization for Stacked Transistor Amplifier (pSemi Corporation)
I
- Intel corporation (20250126832). SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURES WITH GATE-ALL-AROUND DEVICES
- Intel corporation (20250126869). EPITAXIAL SOURCE OR DRAIN STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250142939). DUAL METAL SILICIDE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION
- Intel corporation (20250151363). CONTACT ARCHITECTURE FOR CAPACITANCE REDUCTION AND SATISFACTORY CONTACT RESISTANCE
- Intel Corporation patent applications on April 17th, 2025
- Intel Corporation patent applications on May 1st, 2025
- Intel Corporation patent applications on May 8th, 2025
M
- Micron technology, inc. (20250151284). Memory Arrays Comprising Vertically-Alternating Tiers Of Insulative Material And Memory Cells And Methods Of Forming A Memory Array Comprising Memory Cells Individually Comprising A Transistor And A Capacitor
- Micron Technology, Inc. patent applications on May 8th, 2025
N
S
T
- Taiwan semiconductor manufacturing co., ltd. (20250120138). SEMICONDUCTOR DEVICE
- Taiwan semiconductor manufacturing co., ltd. (20250120158). BIPOLAR JUNCTION TRANSISTOR (BJT) AND FABRICATING METHOD THEREOF
- Taiwan semiconductor manufacturing co., ltd. (20250120171). MANUFACTURING METHOD OF FIELD EFFECT TRANSISTOR STRUCTURE
- Taiwan semiconductor manufacturing co., ltd. (20250126821). FINFET Device and Method of Forming Same
- Taiwan semiconductor manufacturing co., ltd. (20250126883). Semiconductor Structure Cutting Process and Structures Formed Thereby
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 10th, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd. patent applications on April 17th, 2025
- Taiwan semiconductor manufacturing company, ltd. (20250142954). SEMICONDUCTOR DEVICE HAVING A FIN AT A S/D REGION AND A SEMICONDUCTOR CONTACT OR SILICIDE INTERFACING THEREWITH
- Taiwan semiconductor manufacturing company, ltd. (20250151277). INTEGRATED CHIP WITH A GATE STRUCTURE DISPOSED WITHIN A TRENCH
- Taiwan semiconductor manufacturing company, ltd. (20250151305). MULTI-GATE DEVICES AND METHOD OF FABRICATION THEREOF
- Taiwan semiconductor manufacturing company, ltd. (20250151307). STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH NANOWIRES
- Taiwan semiconductor manufacturing company, ltd. (20250151347). METHOD OF MANUFACTURING A FIELD EFFECT TRANSISTOR USING CARBON NANOTUBES AND A FIELD EFFECT TRANSISTOR
- Taiwan semiconductor manufacturing company, ltd. (20250151359). SEMICONDUCTOR DEVICE STRUCTURE
- Taiwan semiconductor manufacturing company, ltd. (20250151368). Gate Spacers in Semiconductor Devices
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 1st, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd. patent applications on May 8th, 2025