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Category:CPC G11C16/16
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Pages in category "CPC G11C16/16"
The following 67 pages are in this category, out of 67 total.
1
- 18325808. MEMORY DEVICE PERFORMING ERASE OPERATION AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
- 18371100. WORD LINE ZONE BASED UNSELECT WORD LINE BIAS TO ENABLE SINGLE-SIDE GATE-INDUCED DRAIN LEAKAGE ERASE (Western Digital Technologies, Inc.)
- 18409344. MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18517429. MEMORY DEVICES SUPPORTING ENHANCED GATE-INDUCED DRAIN LEAKAGE (GIDL) ERASE OPERATION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18517541. CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract (Micron Technology, Inc.)
- 18528337. DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract (Micron Technology, Inc.)
- 18540068. MEMORY OPERATING METHOD, MEMORY AND MEMORY SYSTEM (Yangtze Memory Technologies Co., Ltd.)
- 18542206. MEMORY DEVICES, MEMORY SYSTEMS, AND METHODS FOR OPERATING MEMORY DEVICES (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
- 18590836. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18604276. FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract (MICRON TECHNOLOGY, INC.)
- 18612239. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE simplified abstract (Kioxia Corporation)
- 18659845. MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract (Micron Technology, Inc.)
- 18662971. SEMICONDUCTOR MEMORY DEVICE simplified abstract (KIOXIA CORPORATION)
- 18768970. SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE (Micron Technology, Inc.)
- 18815433. NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION (Kioxia Corporation)
- 18888253. SEMICONDUCTOR MEMORY DEVICE (Kioxia Corporation)
- 18960340. ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS (Micron Technology, Inc.)
K
- Kioxia corporation (20240296893). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240304257). SEMICONDUCTOR MEMORY DEVICE simplified abstract
- Kioxia corporation (20240420774). NONVOLATILE SEMICONDUCTOR MEMORY DEVICE WHICH PERFORMS IMPROVED ERASE OPERATION
- Kioxia Corporation Patent Application Trends in 2024
- KIOXIA CORPORATION Patent Application Trends in 2025
- Kioxia Corporation patent applications on December 19th, 2024
- Kioxia Corporation patent applications on September 12th, 2024
- KIOXIA CORPORATION patent applications on September 5th, 2024
M
- MACRONIX INTERNATIONAL CO., LTD. Patent Application Trends in 2024
- Macronix International Co., Ltd. Patent Application Trends in 2025
- MACRONIX INTERNATIONAL CO., LTD. Patent Application Trends in 2025
- Micron technology, inc. (20240194270). DEBIASING SCHEME FOR PARTIAL BLOCK ERASE BASED ON WORD LINE GROUPS simplified abstract
- Micron technology, inc. (20240221841). FAST BIT ERASE FOR UPPER TAIL TIGHTENING OF THRESHOLD VOLTAGE DISTRIBUTIONS simplified abstract
- Micron technology, inc. (20240242768). CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract
- Micron technology, inc. (20240290392). DECK-BASED ERASE FUNCTION simplified abstract
- Micron technology, inc. (20240296892). MEMORY BLOCK CHARACTERISTIC DETERMINATION simplified abstract
- Micron technology, inc. (20250006275). SENSE VOLTAGE ADJUSTMENT AMONG MULTIPLE ERASE BLOCKS
- Micron technology, inc. (20250087275). SELECTIVELY ERASING ONE OF MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING USING GATE INDUCED DRAIN LEAKAGE
- Micron technology, inc. (20250087276). ERASE SUSPEND WITH CONFIGURABLE FORWARD PROGRESS
- Micron Technology, Inc. Patent Application Trends in 2024
- MICRON TECHNOLOGY, INC. Patent Application Trends in 2025
- Micron Technology, Inc. patent applications on August 29th, 2024
- Micron Technology, Inc. patent applications on January 2nd, 2025
- Micron Technology, Inc. patent applications on July 18th, 2024
- MICRON TECHNOLOGY, INC. patent applications on July 4th, 2024
- Micron Technology, Inc. patent applications on June 13th, 2024
- Micron Technology, Inc. patent applications on March 13th, 2025
- Micron Technology, Inc. patent applications on September 5th, 2024
P
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- SAMSUNG ELECTRONICS CO., LTD Patent Application Trends in 2024
- Samsung electronics co., ltd. (20240194269). MEMORY DEVICES SUPPORTING ENHANCED GATE-INDUCED DRAIN LEAKAGE (GIDL) ERASE OPERATION simplified abstract
- Samsung electronics co., ltd. (20240282383). MEMORY DEVICE INCLUDING STRING SELECT TRANSISTORS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHOD OF OPERATING THE MEMORY DEVICE simplified abstract
- Samsung Electronics Co., Ltd. Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO., LTD. Patent Application Trends in 2024
- Samsung electronics Co., Ltd. Patent Application Trends in 2024
- Samsung electronics CO., LTD. Patent Application Trends in 2025
- Samsung Electronics Co., Ltd. patent applications on August 22nd, 2024
- Samsung Electronics Co., Ltd. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO., LTD. patent applications on June 13th, 2024
- SAMSUNG ELECTRONICS CO.,LTD Patent Application Trends in 2024
- SAMSUNG ELECTRONICS CO.,LTD. Patent Application Trends in 2024
- SK hynix Inc. Patent Application Trends in 2025
- STMicroelectronics (Rousset) SAS Patent Application Trends in 2024
