MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Organization Name

Inventor(s)

Chang Beom Woo of Icheon-si Gyeonggi-do KR

MEMORY DEVICE AND METHOD OF OPERATING THE SAME

This abstract first appeared for US patent application 20250149095 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME

Original Abstract Submitted

a memory device and a method of operating the same are provided. the memory device may include a memory block including a plurality of memory cells, peripheral circuits configured to perform an erase operation including a gate induced drain leakage (gidl) current generation operation and a data erase operation using an gidl current on the memory block, and control logic configured to control the peripheral circuits to perform the erase operation, wherein the control logic is configured to control the peripheral circuits to apply a negative voltage to word lines of the memory block during the gidl current generation operation.