METHOD OF ERASING MEMORY CELLS OF FLASH MEMORY DEVICE AND AN FLASH MEMORY DEVICE USING THE SAME

Abstract: the disclosure is directed to a method of erasing memory cells of a flash memory device including performing first erase operation to erase a block of memory cells of the flash memory device; increasing the erase bias voltage in a stepping manner until a lower edge of a distribution of threshold voltages of the block of memory cells is lower than an erase low side verify voltage; performing a first post program operation until the lower edge of the distribution of threshold voltages of the block of memory cells is higher than a post verify voltage; and performing a second erase operation to determine whether an upper edge of the distribution of threshold voltages of the block of memory cells is lower than an erase high side verify voltage.

Inventor(s): Koying Huang

CPC Classification: G11C16/16 (STATIC STORES (semiconductor memory devices ))

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