18517541. CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION simplified abstract (Micron Technology, Inc.)
CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION
Organization Name
Inventor(s)
CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18517541 titled 'CONTROLLING ERASE-TO-PROGRAM DELAY FOR IMPROVING DATA RETENTION
Simplified Explanation
The patent application describes a memory device that can identify erased blocks, set cells to a target voltage, and determine if the voltage shift meets a retention metric before allowing programming.
Key Features and Innovation
- Memory device with control logic to manage erased blocks efficiently.
- Sets cells to specific threshold voltages for optimal performance.
- Checks voltage shift against retention metrics before programming.
- Enhances memory array operations for improved data retention.
Potential Applications
This technology can be used in:
- Solid-state drives
- Flash memory storage devices
- Embedded systems
- Data centers
- Mobile devices
Problems Solved
- Efficient management of erased memory blocks.
- Ensuring data retention by setting optimal threshold voltages.
- Enhancing overall performance of memory arrays.
Benefits
- Improved data retention in memory devices.
- Enhanced reliability and longevity of storage systems.
- Optimal performance of memory arrays.
- Efficient programming of erased blocks.
Commercial Applications
Title: Enhanced Memory Device for Improved Data Retention This technology can revolutionize the memory storage industry by providing more reliable and efficient memory devices for various applications, leading to better performance and longevity in storage systems.
Questions about Memory Devices
Question 1
How does the memory device determine the amount of threshold voltage shift with respect to the target threshold voltage? The memory device uses control logic to measure the voltage shift after a delay and compares it to the target threshold voltage.
Question 2
What are the potential commercial applications of this memory device technology? This memory device technology can be applied in solid-state drives, flash memory storage devices, data centers, and mobile devices, among others.
Original Abstract Submitted
A memory device includes a memory array and control logic, operatively coupled to the memory array, to perform operations including identifying an erased block of the memory array, causing a set of cells addressable by a target wordline of the erased block to be set to a target threshold voltage, determining an amount of threshold voltage shift with respect to the target threshold voltage after a delay, determining whether the amount of threshold voltage shift satisfies a threshold condition defined by a target data retention metric, and in response to determining that the amount of threshold voltage shift is sufficient, releasing the erased block for programming.
